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          Institute: MPI für Chemische Physik fester Stoffe     Collection: publications 2002     Display Documents



ID: 16437.0, MPI für Chemische Physik fester Stoffe / publications 2002
Dielectric properties of the low dimensional vanadium oxides Ba2V3O9 and Sr2V3O9
Authors:Bobnar, V.; Lunkenheimer, P.; Loidl, A.; Kaul, E. E.; Geibel, C.
Language:English
Date of Publication (YYYY-MM-DD):2002
Title of Journal:Solid State Communications
Journal Abbrev.:Solid State Commun.
Volume:122
Issue / Number:11
Start Page:595
End Page:599
Review Status:Peer-review
Audience:Not Specified
Abstract / Description:The dielectric response of the low-dimensional vanadium oxides Ba2V3O9 and Sr2V3O9 has been investigated in the frequency range of 20 Hz-1 MHz. At low frequencies the dielectric response is governed by strong relaxation-like features, which we attribute to Maxwell-Wagner type contact contributions. The analysis of the complex dielectric spectra in terms of an equivalent circuit revealed the intrinsic dielectric constant and dc conductivity of these systems. The frequency-dependent ac conductivity in both systems follows the universal dielectric response behaviour, clearly indicating that hopping of localised charge carriers is the dominating charge-transport process. Also, a newly observed dielectric relaxation process in both systems is reported and we find evidence for a phase transition close to 455 K in both materials. (C) 2002 Elsevier Science Ltd. All rights reserved.
Free Keywords:magnetically ordered materials; semiconductors; dielectric response; electronic transport
Comment of the Author/Creator:Date: 2002
External Publication Status:published
Document Type:Article
Communicated by:Ina Wanschura
Affiliations:MPI für chemische Physik fester Stoffe
External Affiliations:Jozef Stefan Inst, POB 3000, Ljubljana 1001, Slovenia; Univ Augsburg, Inst Phys, D-86135 Augsburg, Germany; Max Planck Inst Chem Phys Fester Stoffe, D-01187 Dresden, Germany
Identifiers:ISI:000176873500003 [ID No:1]
ISSN:0038-1098 [ID No:2]
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