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          Institute: MPI für Festkörperforschung     Collection: FKF Publikationen 2000     Display Documents



  history
ID: 181442.0, MPI für Festkörperforschung / FKF Publikationen 2000
High-resolution DLTS studies of vacancy-related defects in irradiated and in ion-implanted n-type silicon
Authors:Evans-Freeman, J. H.; Peaker, A. R.; Hawkins, I. D.; Kan, P. Y. Y.; Terry, J.; Rubaldo, L.; Ahmed, M.; Watts, S.; Dobaczewski, L.
Date of Publication (YYYY-MM-DD):2000
Title of Journal:Materials Science in Semiconductor Processing
Volume:3
Start Page:237
End Page:241
Copyright:Jahrbuch 2001, Copyright MPG 2001
Review Status:not specified
Audience:Not Specified
Intended Educational Use:No
Document Type:Article
Communicated by:Michaela Asen-Palmer
Affiliations:MPI für Festkörperforschung
Identifiers:LOCALID:27018
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