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          Institute: MPI für Chemische Physik fester Stoffe     Collection: publications 2002     Display Documents



ID: 18542.0, MPI für Chemische Physik fester Stoffe / publications 2002
Effect of Ge-doping and pressure in the vicinity of the QCP of YbRh2Si2
Authors:Trovarelli, O.; Custers, J.; Gegenwart, P.; Geibel, C.; Hinze, P.; Mederle, S.; Sparn, G.; Steglich, F.
Language:English
Date of Publication (YYYY-MM-DD):2002-03
Title of Journal:Physica B
Journal Abbrev.:Physica B
Volume:312
Start Page:401
End Page:402
Review Status:Peer-review
Audience:Not Specified
Abstract / Description:We present electrical resistivity (p) and AC magnetic susceptibility measurements on Ge-doped single crystals of the NFL compound YbRh2Si2. Upon producing the volume expansion (DeltaVsimilar or equal to + 0.3%) necessary to tune this material to its QCP, the low-temperature rho(T) data of YbRh2(Si0.95Ge0.05)(2) are found to follow rho(T) = rho(0) + bT over three decades in temperature. We compare the effect of A V to that produced by the application of hydrostatic pressure, and show that the linear temperature dependence is intrinsic to the proximity to the QCP and not due to disorder induced by Ge- alloying. (C) 2002 Elsevier Science B.V. All rights reserved.
Free Keywords:non-fermi liquid; quantum critical phenomena; YbRh2Si2
Comment of the Author/Creator:Date: 2002, MAR
External Publication Status:published
Document Type:Article
Communicated by:Ina Wanschura
Affiliations:MPI für chemische Physik fester Stoffe
External Affiliations:MPI, CPfS, Max Planck Inst Chem Phys Solids, Nothnitzer Str 40,; D-01187 Dresden, Germany; MPI, CPfS, Max Planck Inst Chem Phys Solids, D-01187 Dresden, Germany
Identifiers:ISI:000175871000146 [ID No:1]
ISSN:0921-4526 [ID No:2]
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