MPI für Festkörperforschung / FKF Publikationen 2004 |
|Intermixing in Ge hut cluster islands|
|Authors:||Denker, U.; Sigg, H.; Schmidt, O. G.|
|Date of Publication (YYYY-MM-DD):||2004|
|Title of Journal:||Applied Surface Science|
|Issue / Number:||1-4|
|Review Status:||not specified|
|Abstract / Description:||We have investigated growth and overgrowth of Ge hut cluster islands.
In a single island layer, free-standing hut clusters intermix only
slowly with Si. When the islands are grown in a vertical stack, the
critical thickness for island formation is reduced and intermixing is
strongly increased where buried islands are present. Only one island
layer contributes to the photoluminescence (PL) signal, since carriers
tunnel to the island layer which is the lowest in energy before
recombining. Furthermore, hut cluster islands which were overgrown with
Si at reduced temperatures are investigated. We show that at low
capping temperatures, the island-related photoluminescence peak shifts
below the band gap of Ge and saturates at around 0.616 eV (2.01 mum).
(C) 2003 Elsevier B.V. All rights reserved.
|Free Keywords:||self-assembly; luminescence; atomic force microscopy; molecular beam
|External Publication Status:||published|
|Communicated by:||Michaela Asen-Palmer|
|Affiliations:||MPI für Festkörperforschung|
|External Affiliations:||Max Planck Inst Festkorperforsch, D-70569 Stuttgart, Germany.
; Paul Scherrer Inst, CH-5232 Villigen, Switzerland.
|Identifiers:||ISI:000189273900027 [ID No:1] |
ISSN:0169-4332 [ID No:2]
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