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          Institute: Fritz-Haber-Institut     Collection: Physical Chemistry     Display Documents



ID: 208304.0, Fritz-Haber-Institut / Physical Chemistry
Electrochemical micromachining of p-type silicon
Authors:Allongue, Philippe; Jiang, Peng; Kirchner, Viola; Trimmer, Andrew L.; Schuster, Rolf
Language:English
Date of Publication (YYYY-MM-DD):2004-07-03
Title of Journal:Journal of Physical Chemistry B
Journal Abbrev.:J. Phys. Chem. B
Volume:108
Issue / Number:38
Start Page:14434
End Page:14439
Title of Issue:Gerhard Ertl Festschrift
Full name of Issue-Editor(s):Freund, Hans-Joachim; Knözinger, Helmut
Copyright:© 2004 American Chemical Society
Review Status:Peer-review
Audience:Experts Only
Abstract / Description:Electrochemical micromachining (ECM) of p-type Si substrates is accomplished in HF-based solutions by applying nanosecond potential pulses between the substrate and a tungsten tool electrode. With sufficiently high potential pulses, the silicon potential locally reaches the electropolishing regime and microstructures may be machined. ECM precision is investigated as a function of pulse height, pulse duration, solution composition, and silicon doping level. Results show that micrometer precision may be obtained with highly doped substrates and that experimental data can be explained within a simple model, taking the charging time of the interface capacitance into account. In highly doped p-Si, well-defined microstructures can be realized without application of a mask on the surface. In addition, the isotropy of the process allows fabrication of structures not constrained by the crystal direction. In the case of low-doped material, ECM is only possible for very short pulses (<3 ns).
Free Keywords:
External Publication Status:published
Document Type:Article
Communicated by:Gerhard Ertl
Affiliations:Fritz-Haber-Institut/Physical Chemistry
External Affiliations:Allongue P, Laboratoire de Physique de la Matière Condensée, CNRS UMR 7643, Ecole Polytechnique, F-91128 Palaiseau, France; Trimmer AL, Dept. of Chem. Eng., 102 Engineers' Way, P.O. Box 400741, Univ. of Virginia, Charlottesville, VA, 22904, USA
Identifiers:URL:http://pubs.acs.org/cgi-bin/abstract.cgi/jpcbfk/20...
DOI:10.1021/jp0497312
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