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          Institute: Fritz-Haber-Institut     Collection: Theory     Display Documents



  history
ID: 2088.2, Fritz-Haber-Institut / Theory
The Influence of Structural Relaxation on the Valence-Band Offset at Semiconductor-Semiconductor Interfaces
Authors:Methfessel, M.; Agrawal, B. K.; Scheffler, M.
Editors:Anastassakis, E. M.; Joannopoulos, J. D.
Date of Publication (YYYY-MM-DD):1990
Title of Journal:Proc. 20th Int. Conf. on the Physics of Semiconductors (ICPS-20)
Start Page:989
End Page:992
Review Status:not specified
Audience:Not Specified
Document Type:Article
Communicated by:Matthias Scheffler
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