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          Institute: Fritz-Haber-Institut     Collection: Theory     Display Documents



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ID: 2127.2, Fritz-Haber-Institut / Theory
Formation energies and abundances of intrinsic point defects at the GaAs/AlAs(100) interface
Authors:Heinemann, M.; Scheffler, M.
Date of Publication (YYYY-MM-DD):1992
Title of Journal:Appl. Surf. Sci.
Volume:56-58
Start Page:628
End Page:631
Review Status:not specified
Audience:Not Specified
Document Type:Article
Communicated by:Matthias Scheffler
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