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          Institute: Fritz-Haber-Institut     Collection: Molecular Physics     Display Documents



  history
ID: 289559.0, Fritz-Haber-Institut / Molecular Physics
A high resolution photoemission study of phenol adsorption on Si(1 0 0)2 × 1
Authors:Casaletto, Maria Pia; Carbone, Marilena; Piancastelli, Maria Novella; Horn, Karsten; Weiß, Klaus; Zanoni, R.
Language:English
Date of Publication (YYYY-MM-DD):2005-05-10
Title of Journal:Surface Science
Journal Abbrev.:Surf. Sci.
Volume:582
Issue / Number:1-3
Start Page:42
End Page:48
Copyright:2005 Elsevier Science B.V. All rights reserved.
Review Status:Peer-review
Audience:Experts Only
Abstract / Description:The adsorption of a bi-functional organic molecule like phenol on Si(1 0 0)2 × 1 has been investigated by synchrotron radiation-induced photoemission in the valence band, Si 2p, C 1s and O 1s core-level regions. Experiments have been carried out as a function of phenol exposure at room temperature. Phenol adsorbs on Si(1 0 0)2 × 1 through a dissociative mechanism at room temperature, interacting with the surface by its alcoholic functionality. The line-shape analysis of Si 2p spectra indicates the formation of Si–O and Si–H bonds, as a consequence of the cleavage of the C₆H₅O–H bond and the binding of the fragments ( C₆H₅O– group and H atom) to the Si(1 0 0)2 × 1 surface dimers. The progressive quenching of the silicon surface dimer atoms and the corresponding intensity increase of the Si–O C₆H₅ and Si–H components have been observed as a function of phenol exposure. The presence of the phenoxide ( C₆H₅O–) group on the silicon surface has been evidenced also by the C 1s spectrum, consisting of two components in a 1:5 intensity ratio, energy splitted by 1.5 eV, which can be assigned to carbon atom linked to oxygen (C–O group) and carbon atoms of the aromatic ring, respectively.
Free Keywords:Silicon; Single crystal surface; Phenol adsorption; High resolution core-level photoemission; Synchrotron radiation photoelectron spectroscopy; Surface chemical reaction
External Publication Status:published
Document Type:Article
Communicated by:Gerard Meijer
Affiliations:Fritz-Haber-Institut/Molecular Physics
External Affiliations:Istituto per lo Studio dei Materiali Nanostrutturati (ISMN), CNR, Via Ugo La Malfa 153, 90146 Palermo, Italy;
Dipartimento di Scienze e Tecnologie Chimiche, Universita’ Tor Vergata, Roma, Italy;
Dipartimento di Chimica, Universita’ di Roma “La Sapienza”, Roma, Italy
Identifiers:URL:http://www.sciencedirect.com/science?_ob=ArticleUR...
DOI:10.1016/j.susc.2005.03.004
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