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          Institute: MPI für Festkörperforschung     Collection: FKF Publikationen 2006     Display Documents



  history
ID: 306006.0, MPI für Festkörperforschung / FKF Publikationen 2006
Evolution of buried semiconductor nanostructures and origin of stepped surface mounds during capping
Authors:Katsaros, G.; Rastelli, A.; Stoffel, M.; Costantini, G.; Schmidt, O. G.; Kern, K.; Tersoff, J.; Müller, E.; von Känel, H.
Language:English
Date of Publication (YYYY-MM-DD):2006
Title of Journal:Applied Physics Letters
Volume:89
Issue / Number:25
Sequence Number of Article:253105
Review Status:Peer-review
Audience:Not Specified
Abstract / Description:The authors apply selective wet chemical etching and atomic force
microscopy to reveal the three-dimensional shape of SiGe/Si(001)
islands after capping with Si. Although the "self-assembled quantum
dots" remain practically unaffected by capping in the temperature range
of 300-450 degrees C, significant morphological changes take place on
the Si surface. At 450 degrees C, the morphology of the capping layer
(Si matrix) evolves toward an intriguing semifacetted structure, which
we call a "ziggurat," giving the misleading impression of a stepped
SiGe island shape. (c) 2006 American Institute of Physics.
External Publication Status:published
Document Type:Article
Communicated by:N. N.
Affiliations:MPI für Festkörperforschung
External Affiliations:Max Planck Inst Festkorperforsch, D-70569 Stuttgart, Germany.
; IBM Corp, Div Res, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA.
; PSI Wurenlingen & Villigen, Lab Mikro & Nanotechnol, CH-5232 Villigen, Switzerland.
; Politecn Milan, Dipartimento Fis, L NESS, Polo Reg Como, I-22100 Como, Italy.
Identifiers:ISI:000243415200085 [ID No:1]
ISSN:0003-6951 [ID No:2]
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