MPI für Festkörperforschung / FKF Publikationen 2006 |
|Electrical properties of the ZnO nanowire transistor and its analysis with equivalent circuit model|
|Authors:||Yim, C. Y.; Jeon, D. Y.; Kim, K. H.; Kim, G. T.; Woo, Y. S.; Roth, S.; Lee, J. S.; Kim, S.|
|Date of Publication (YYYY-MM-DD):||2006|
|Title of Journal:||Journal of the Korean Physical Society|
|Issue / Number:||6|
|Abstract / Description:||A single ZnO nanowire field-effect transistor(FET) was fabricated and
its current-voltage characteristics were recorded at the temperatures
ranging from T = 107 K to 300 K. Current-voltage characteristics showed
typical non-ohmic behaviors with noticeable temperature dependence of
the carrier concentration and the mobilities, reflecting the influence
of the contact barriers formed between the ZnO nanowire and metal
electrodes. In this paper, an equivalent circuit model of the ZnO
nanowire FET and its analysis methods with PSPICE simulation are
suggested in order to model the contact barriers in nanowire devices.
|Free Keywords:||ZnO nanowire; field effect transistor; contact resistance; PSPICE
|External Publication Status:||published|
|Communicated by:||N. N.|
|Affiliations:||MPI für Festkörperforschung|
|External Affiliations:||Korea Univ, Dept Elect Engn, Seoul 136701, South Korea.
; Max Planck Inst Festkorperforsch, D-70569 Stuttgart, Germany.
; Univ Calif Davis, Dept Chem Engn & Mat Sci, Davis, CA 95616 USA.
|Identifiers:||ISI:000238324000083 [ID No:1] |
ISSN:0374-4884 [ID No:2]
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