Home News About Us Contact Contributors Disclaimer Privacy Policy Help FAQ

Home
Search
Quick Search
Advanced
Fulltext
Browse
Collections
Persons
My eDoc
Session History
Login
Name:
Password:
Documentation
Help
Support Wiki
Direct access to
document ID:


          Institute: MPI für Festkörperforschung     Collection: FKF Publikationen 2006     Display Documents



  history
ID: 306251.0, MPI für Festkörperforschung / FKF Publikationen 2006
Manganese as a fast charge carrier trapping center in InP
Authors:Korona, K. P.; Wysmołek, A.; Kamińska, M.; Twardowski, A.; Piersa, M.; Palczewska, M.; Strzelecka, G.; Hruban, A.; Kuhl, J.; Adomavicius, R.; Krotkus, A.
Language:English
Date of Publication (YYYY-MM-DD):2006
Title of Journal:Physica B
Volume:382
Issue / Number:1-2
Start Page:220
End Page:228
Review Status:Peer-review
Audience:Not Specified
Abstract / Description:Significant influence of Mn centers on the radiative and nonradiative
recombinations in Czochralski-grown InP:Mn crystals was observed.
Time-resolved measurements showed that manganese recombination centers
caused very fast, probably subpicosecond, decay of holes and excitons.
This recombination was explained by the capture of holes on an excited
state of the Mn acceptor. The holes trapping coefficient R-Mn
determined on the order of 10(-5) cm(3)/s provided an estimation of the
Mn cross-section for hole capture sigma(p) of the order of 10(-12)
cm(2). Electrical transport measurements showed that hopping
conductivity dominated at low temperatures. From analysis of the
hopping, the wavefunction radius of Mn-bound hole a(f) = 0.74 +/- 0.1
nm was calculated. A model explaining the values of af is presented.
(c) 2006 Elsevier B.V. All rights reserved.
Free Keywords:InP; manganese; hopping; dynamics
External Publication Status:published
Document Type:Article
Communicated by:N. N.
Affiliations:MPI für Festkörperforschung
External Affiliations:Univ Warsaw, Inst Expt Phys, PL-00681 Warsaw, Poland.
; ITME, PL-01919 Warsaw, Poland.
; MPI Festkorperforsch, D-70569 Stuttgart, Germany.
; Inst Semicond Phys, LT-2600 Vilnius, Lithuania.
Identifiers:ISI:000238780100036 [ID No:1]
ISSN:0921-4526 [ID No:2]
The scope and number of records on eDoc is subject to the collection policies defined by each institute - see "info" button in the collection browse view.