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          Institute: MPI für Festkörperforschung     Collection: FKF Publikationen 2006     Display Documents



  history
ID: 306269.0, MPI für Festkörperforschung / FKF Publikationen 2006
Single-walled carbon nanotube transistors on an ultra-thin gate dielectric
Authors:Weitz, R. T.; Zschieschang, U.; Klauk, H.; Burghard, M.; Kern, K.
Language:English
Date of Publication (YYYY-MM-DD):2006
Title of Journal:physica status solidi (b)
Volume:243
Issue / Number:13
Start Page:3394
End Page:3398
Review Status:Peer-review
Audience:Not Specified
Abstract / Description:Back-gated single-walled carbon nanotube (SWCNT) transistors were
fabricated using a silane-based organic self-assembled monolayer as a
gate dielectric on top of a highly doped silicon wafer. These ultrathin
layers ensure strong gate coupling and therefore low operation
voltages. The source and drain contacts were patterned through
conventional electron-beam lithography after deposition of the organic
monolayer and the nanotubes. The organic monolayer was found to be
stable against an e-beam dose of 300 mu C/cm(2), as reflected by the
very low gate leakage current density of 10(-7) A/cm(2) at a gate
voltage of 2 V. On this basis, single-electron transistors (SETs) were
obtained from individual metallic SWCNTs, which display Coulomb
oscillations with a period five times smaller than devices with a 200
nm SiO2 gate dielectric. Moreover, field-effect transistors made from
individual semiconducting SWCNTs operate with gate-source voltages of
-2 V, show good saturation, small hysteresis (200 mV) as well as a low
subthreshold swing (290 mV/dec). (c) 2006 WILEY-VCH Verlag GmbH & Co.
KGaA, Weinheim.
External Publication Status:published
Document Type:Article
Communicated by:N. N.
Affiliations:MPI für Festkörperforschung
External Affiliations:Max Planck Inst Solid State Res, D-70569 Stuttgart, Germany.
Identifiers:ISI:000242187000091 [ID No:1]
ISSN:0370-1972 [ID No:2]
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