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          Institute: MPI für Festkörperforschung     Collection: FKF Publikationen 2006     Display Documents



  history
ID: 306271.0, MPI für Festkörperforschung / FKF Publikationen 2006
The microwave induced resistance response of a high mobility 2DEG from the quasi-classical limit to the quantum Hall regime
Authors:Studenikin, S. A.; Byszewski, M.; Maude, D. K.; Potemski, M.; Sachrajda, A.; Wasilewski, Z. R.; Hilke, M.; Pfeiffer, L. N.; West, K. W.
Language:English
Date of Publication (YYYY-MM-DD):2006
Title of Journal:Physica E
Volume:34
Issue / Number:1-2
Start Page:73
End Page:76
Review Status:Peer-review
Audience:Not Specified
Abstract / Description:Microwave induced resistance oscillations (MIROs) were studied
experimentally over a very wide range of frequencies ranging from
similar to 20 GHz up to similar to 4 THz, and from the quasi-classical
regime to the quantum Hall effect regime. At low frequencies regular
MIROs were observed, with a periodicity determined by the ratio of the
microwave to cyclotron frequencies. For frequencies below 150 GHz the
magnetic field dependence of MIROs waveform is well described by a
simplified version of an existing theoretical model, where the damping
is controlled by the width of the Landau levels. In the THz frequency
range MIROs vanish and only pronounced resistance changes are observed
at the cyclotron resonance. The evolution of MIROs with frequency is
presented and discussed. (c) 2006 Elsevier B.V. All rights reserved.
Free Keywords:2DEG; microwaves; zero-resistance states; Landau levels
External Publication Status:published
Document Type:Article
Communicated by:N. N.
Affiliations:MPI für Festkörperforschung
External Affiliations:Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada.
; Max Planck Inst Festkorperforsch, Grenoble High Magnet Field Lab, F-38042 Grenoble, France.
; McGill Univ, Dept Phys, Montreal, PQ H3A 2T8, Canada.
; Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA.
; CNRS, F-38042 Grenoble, France.
Identifiers:ISI:000239903200016 [ID No:1]
ISSN:1386-9477 [ID No:2]
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