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          Institute: MPI für Astronomie     Collection: Publikationen_mpia     Display Documents



ID: 308785.0, MPI für Astronomie / Publikationen_mpia
Multiexponential photoluminescence decay in indirect-gap semiconductor nanocrystals
Authors:Delerue, C.; Allan, G.; Reynaud, C.; Guillois, O.; Ledoux, G.; Huisken, F.
Date of Publication (YYYY-MM-DD):2006
Journal Abbrev.:Physical Review B
Volume:73
Start Page:235318-1
End Page:4
Audience:Not Specified
Abstract / Description:The origin of the multiexponential photoluminescence (PL) decay of Si quantum dots (QDs) has been debated for a long time. We present studies combining time-resolved PL experiments and tight binding calculations of phonon-assisted optical transitions showing that the distribution of lifetimes and its wavelength dependence are quantitatively predictable and can be interpreted as intrinsic properties of the QDs due to the indirect nature of the Si bandgap. This result can be generalized to QD ensembles of any indirect gap semiconductor.
External Publication Status:published
Document Type:Article
Communicated by:N. N.
Affiliations:MPI für Astronomie
Identifiers:URL:http://adsabs.harvard.edu/cgi-bin/nph-bib_query?bi...
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