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          Institute: MPI für Festkörperforschung     Collection: FKF Publikationen 2007     Display Documents



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ID: 338615.0, MPI für Festkörperforschung / FKF Publikationen 2007
Composition and atomic ordering of Ge/Si(001) wetting layers
Authors:Malachias, A.; Metzger, T. H.; Stoffel, M.; Schmidt, O. G.; Holý, V.
Language:English
Date of Publication (YYYY-MM-DD):2007
Title of Journal:Thin Solid Films
Volume:515
Issue / Number:14
Start Page:5587
End Page:5592
Review Status:Peer-review
Audience:Not Specified
Abstract / Description:A combination of X-ray diffraction with anomalous X-ray scattering at the Ge K edge and specular reflectivity measurements is used to reveal both composition and atomic ordering in Ge:Si wetting layers. By comparing the intensity distribution close to the (400) and (200) surface reflections we show that the Ge wetting layer is composed of a SiGe alloy which exhibits atomic ordering. Due to the Si interdiffusion the wetting layer thickness is larger than the nominal 3 ML Ge deposition. The chemical depth distribution is obtained from X-ray reflectivity measurements and confirms the enhanced Ge interdiffusion. These phenomena evidence the crucial interplay between surface kinetics and intermixing in SiGe thin films and nanostructures on Si(001) substrates. (c) 2006 Elsevier B.V. All rights reserved.
Free Keywords:atomic ordering; wetting layer; grazing incidence diffraction; anomalous X-ray scattering
External Publication Status:published
Document Type:Article
Communicated by:Michaela Asen-Palmer
Affiliations:MPI für Festkörperforschung
External Affiliations:Max Planck Inst Festkorperforsch, D-70569 Stuttgart, Germany.; European Synchrotron Radiat Facil, F-38043 Grenoble, France.; Charles Univ Prague, Fac Math & Phys, Dept Elect Struct, CR-12116 Prague, Czech Republic.
Identifiers:ISI:000246548300012 [ID No:1]
ISSN:0040-6090 [ID No:2]
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