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          Institute: Fritz-Haber-Institut     Collection: Theory     Display Documents



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ID: 362296.0, Fritz-Haber-Institut / Theory
Linking density functional and density-matrix theory: Picosecond electron relaxation at the Si(100) surface
Authors:Buecking, Norbert; Kratzer, Peter; Scheffler, Matthias; Knorr, Andreas
Language:English
Date of Publication (YYYY-MM-DD):2008-06-11
Title of Journal:Physical Review B
Journal Abbrev.:Phys. Rev. B
Volume:77
Issue / Number:23
Start Page:233305-1
End Page:233305-4
Review Status:Peer-review
Audience:Experts Only
Abstract / Description:We describe an approach that links the density-matrix theory for electron transport and relaxation with the density-functional theory for electronic structure. Our analysis of the electron dynamics at Si(100) reveals an
unanticipated phonon bottleneck between bulklike and surface states. The fastest relaxation process observed in recent two-photon photoemission experiments is in good agreement with the calculated phonon-mediated intrasurface-band scattering.
External Publication Status:published
Document Type:Article
Communicated by:Matthias Scheffler
Affiliations:Fritz-Haber-Institut/Theory
External Affiliations:AG Nichtlineare Optik und Quantenelektronik, Institut für Theoretische Physik, Technische Universität Berlin,
Hardenbergstrasse 36 PN 7-1, 10623 Berlin, Germany

Fachbereich Physik, Universität Duisburg-Essen, Lotharstrasse 1, 47048 Duisburg, Germany
Identifiers:URL:http://dx.doi.org/10.1103/PhysRevB.77.233305 [Open Access CC BY 3.0]
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