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          Institute: Fritz-Haber-Institut     Collection: Inorganic Chemistry     Display Documents



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ID: 402620.0, Fritz-Haber-Institut / Inorganic Chemistry
Growth behaviors of ultrathin ZnSe nanowires by Au-catalyzed molecular-beam epitaxy
Authors:Cai, Y.; Wong, T. L.; Chan, S. K.; Sou, I. K.; Su, Dang Sheng; Wang, N.
Language:English
Research Context:Nanoparticles: High Resolution Electron Microscopy
Date of Publication (YYYY-MM-DD):2008-12-09
Title of Journal:Applied Physics Letters
Journal Abbrev.:Appl.Phys.Lett.
Volume:93
Issue / Number:23
Start Page:233107-1
End Page:233107-3
Copyright:©2008 American Institute of Physics
Review Status:Peer-review
Audience:Experts Only
Abstract / Description:Ultrathin ZnSe nanowires grown by Au-catalyzed molecular-beam epitaxy show an interesting growth behavior of diameter dependence of growth rates. The smaller the nanowire diameter, the faster is its growth rate. This growth behavior is totally different from that of the nanowires with diameters greater than 60 nm and cannot be interpreted by the classical theories of the vapor-liquid-solid mechanism. For the Au-catalyzed nanowire growth at low temperatures, we found that the surface and interface incorporation and diffusion of the source atoms at the nanowire tips controlled the growth of ultrathin ZnSe nanowires.
Free Keywords:catalysis; diffusion; II-VI semiconductors; molecular beam epitaxial growth; nanowires; semiconductor growth; semiconductor quantum wires; zinc compounds
External Publication Status:published
Document Type:Article
Communicated by:Robert Schlögl
Affiliations:Fritz-Haber-Institut/Inorganic Chemistry/Micro- and Nanostructure / Carbon
External Affiliations:Department of Physics and the Institute of Nano Science and Technology, the Hong Kong University of Science and Technology, Clear Water Bay, Hong Kong, People's Republic of China
Identifiers:URL:http://dx.doi.org/10.1063/1.3037024 [only for subscriber]
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