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          Institute: Fritz-Haber-Institut     Collection: Physical Chemistry     Display Documents



  history
ID: 430370.0, Fritz-Haber-Institut / Physical Chemistry
Etching mechanism and atomic structure of H–Si(111) surfaces prepared in NH4F
Authors:Allongue, Philippe; Kieling, Virginia; Gerischer, Heinz
Language:English
Date of Publication (YYYY-MM-DD):1995
Title of Journal:Electrochimica Acta
Journal Abbrev.:Electrochim. Acta
Volume (in Journal):40
Issue / Number:10
Start Page:1353
End Page:1360
Name of Conference/Meeting:6th Int. Fischer Symposium on Nanotechniques in Electrochemistry
Place of Conference/Meeting:Univ Karlsruhe, Karlsruhe, Germany
(Start) Date of Conference/Meeting
 (YYYY-MM-DD):
1994-06-13
End Date of Conference/Meeting 
 (YYYY-MM-DD):
1994-06-16
Copyright:© 1995 Published by Pergamon-Elsevier Science Ltd
Review Status:Peer-review
Audience:Experts Only
Abstract / Description:The atomic structure of H-terminated Si(111) surfaces is investigated by in-situ STM and electrochemical measurements in NH4F solutions of 2 < pH < 8. Etch rate measurements show only a slight pH-dependence between pH 2 and 14, when including alkaline solutions. Electrochemical results indicate that the etching comprises two components, one chemical and the other electrochemical, whose relative importance depends on the pH. The possible reactants involved in the etching are studied by varying the composition of the solutions. Models describing the surface processes at the molecular level are presented. The main conclusion of this work is that the nature of the chemical etching tends to smoothen the surface, as is the case in buffered ammonium fluoride where ideally flat surface can be prepared, whereas the electrochemical one roughens the surface.
Free Keywords:Silicon; surface structure; in-situ STM; etching mechanism; pH dependence of etching
External Publication Status:published
Document Type:Conference-Paper
Communicated by:Martin Wolf
Affiliations:Fritz-Haber-Institut/Physical Chemistry
External Affiliations:Allongue P, Univ Paris, CNRS, UPR 15, 4 Place Jussieu, Tour 22, F-75005 Paris, France; Kieling V, Univ Fed Rio Grande Sul, LACOR, Av. Osvaldo Aranha 99, 7 ° andar, BR-90000 Porto Alegre, RS, Brazil
Identifiers:URL:http://dx.doi.org/10.1016/0013-4686(95)00071-L [only subscriber]
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