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          Institute: Fritz-Haber-Institut     Collection: Physical Chemistry     Display Documents



  history
ID: 430373.0, Fritz-Haber-Institut / Physical Chemistry
Probing by in situ scanning tunneling microscopy the influence of an organic additive on Si etching in NaOH
Authors:Allongue, Philippe; Bertagna, Valérie; Kieling, Virginia; Gerischer, Heinz
Language:English
Date of Publication (YYYY-MM-DD):1994-05
Title of Journal:Journal of Vacuum Science & Technology B
Journal Abbrev.:J. Vac. Sci. Technol. B
Volume:12
Issue / Number:3
Start Page:1539
End Page:1542
Copyright:© 1994 American Institute of Physics. All Rights Reserved.
Review Status:Peer-review
Audience:Experts Only
Abstract / Description:The etching of Si in alkaline solution is used to fabricate microstructures. A recent study has described the etching reaction at a molecular level. The present paper studies, with in situ scanning tunneling microscopy, the effect of a surfactant (triton) on Si etching and its consequences regarding the resulting surface topography, which is an important question in the preparation of substrates.
Free Keywords:silicon; etching; STM; surface structure; surfactants; electrochemistry; dissolution; in-situ processing
External Publication Status:published
Document Type:Article
Communicated by:Martin Wolf
Affiliations:Fritz-Haber-Institut/Physical Chemistry
External Affiliations:Allongue P, Bertagna V, Univ Paris, CNRS, UPR 15, 4 Place Jussieu, Tour 22, F-75005, Paris, France; Kieling V, Univ Fed Rio Grande Sul, LACOR, Av. Osvaldo Aranha 99, 7° andar, BR-90000 Porto Alegre, RS, Brazil
Identifiers:URL:http://dx.doi.org/10.1116/1.587281 [only subscriber]
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