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          Institute: Fritz-Haber-Institut     Collection: Physical Chemistry     Display Documents



ID: 430379.0, Fritz-Haber-Institut / Physical Chemistry
The mechanism of the anodic oxidation of silicon in acidic fluoride solutions revisited
Authors:Gerischer, Heinz; Allongue, Philippe; Costa Kieling, Virginia
Language:English
Date of Publication (YYYY-MM-DD):1993-06
Title of Journal:Berichte der Bunsen-Gesellschaft fur Physikalische Chemie
Journal Abbrev.:Ber. Bunsenges. Phys. Chem.
Volume:97
Issue / Number:6
Start Page:753
End Page:756
Copyright:© 1993 VCH Publishers Inc.
Review Status:Peer-review
Audience:Experts Only
Abstract / Description:The present experience of the electrochemical dissolution of silicon and previous assumptions upon the mechanism are briefly reviewed. A new model is developed which explains how the coverage of the surface by hydrogen can be maintained in spite of the continuous anodic dissolution.
Free Keywords:electrochemistry; etching; interfaces; semiconductors;
transform infrared-spectroscopy; n-type silicon; HF treatment; hydrogen termination; surface-morphology; Si(111) surfaces; Si; adsorption; water; Si(100)
External Publication Status:published
Document Type:Article
Communicated by:Martin Wolf
Affiliations:Fritz-Haber-Institut/Physical Chemistry
External Affiliations:Allongue P, Univ Paris, CNRS, UPR 15, F-75005 Paris, France; Costa Kieling V, Univ Fed Rio Grande Sul, Corrosao & Protecao Metais Lab, BR-90000 Porto Alegre, RS Brazil
Identifiers:LOCALID:LP494 [IDS number]
ISSN:0005-9021
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