Home News About Us Contact Contributors Disclaimer Privacy Policy Help FAQ

Home
Search
Quick Search
Advanced
Fulltext
Browse
Collections
Persons
My eDoc
Session History
Login
Name:
Password:
Documentation
Help
Support Wiki
Direct access to
document ID:


          Institute: Fritz-Haber-Institut     Collection: Physical Chemistry     Display Documents



ID: 430381.0, Fritz-Haber-Institut / Physical Chemistry
Etching of silicon in NaOH solutions. I: In-situ STM investigation of n-Si(111)
Authors:Allongue, Philippe; Costa Kieling, Virginia; Gerischer, Heinz
Language:English
Date of Publication (YYYY-MM-DD):1993-04
Title of Journal:Journal of the Electrochemical Society
Journal Abbrev.:J. Electrochem. Soc.
Volume:140
Issue / Number:4
Start Page:1009
End Page:1018
Copyright:© 1993 The Electrochemical Society, Inc.
Review Status:Peer-review
Audience:Experts Only
Abstract / Description:The etching of n-type silicon (111) has been investigated by means of in situ scanning tunneling microscopy (STM) observations performed over a wide range of bias of the sample. A special procedure has been used to observe topography changes at potentials close and positive of the rest potential. Irrespective of the bias, images show that the surface consists in atomically smooth terraces separated by 3.1 angstrom hi-gh steps. At cathodic bias, the etching occurs principally at terrace edges and (111) terraces are most probably H terminated, which prevents their reconstruction, as could be seen in atomically resolved pictures taken in situ. Triangular etch pits nucleate when the potential approaches the rest potential. The Si-H coverage is, however, preserved despite the continuous removal of Si atoms from the surface. Beyond the passivation potential, a high density of etch pits is developed on the terraces, although the dissolution rate decreases. It is shown that the etch rate of the dissolution can be derived from sequences of STM images and that it presents a maximum, close to the rest potential, as it has been found previously with long-term material loss measurements. The present STM results yield new insights into the surf ace chemistry and the anisotropy of the reaction. The complementary electrochemical characterization of the etching process will be outlined in Part II of this paper (the following article) where a detailed reaction mechanism is presented.
Free Keywords:KOH; crystalline silicon; alkaline-solutions; Si(111) surfaces; electrolytes; dependence; adsorption; behavior; scale; Si
External Publication Status:published
Document Type:Article
Communicated by:Martin Wolf
Affiliations:Fritz-Haber-Institut/Physical Chemistry
External Affiliations:Allongue P, Univ Paris, CNRS, UPR 15, F-75005 Paris, France; Costa Kieling V, Univ Fed Rio Grande Sul, Corrosao & Protecao Metais Lab, Br-90000 Porto Alegre, RS Brazil
Identifiers:URL:http://dx.doi.org/10.1149/1.2056189
The scope and number of records on eDoc is subject to the collection policies defined by each institute - see "info" button in the collection browse view.