Home News About Us Contact Contributors Disclaimer Privacy Policy Help FAQ

Home
Search
Quick Search
Advanced
Fulltext
Browse
Collections
Persons
My eDoc
Session History
Login
Name:
Password:
Documentation
Help
Support Wiki
Direct access to
document ID:


          Institute: Fritz-Haber-Institut     Collection: Physical Chemistry     Display Documents



ID: 430383.0, Fritz-Haber-Institut / Physical Chemistry
In-situ STM observations of the etching of n-Si(111) in NaOH solutions
Authors:Allongue, Philippe; Brune, Harald; Gerischer, Heinz
Language:English
Date of Publication (YYYY-MM-DD):1992-09-15
Title of Journal:Surface Science
Journal Abbrev.:Surf. Sci.
Volume:275
Issue / Number:3
Start Page:414
End Page:423
Copyright:© 1992 Elsevier Science B.V. All rights reserved.
Review Status:Peer-review
Audience:Experts Only
Abstract / Description:In situ scanning tunneling microscopy (STM) has been used to investigate the bias dependence of the etching of Si(111) in alkaline solutions. Sequences of images showing the time evolution of the surface structure have been recorded. Under hydrogen evolution, double layer steps ( ~ 3 Å) are preferentially etched laterally. Closer to the rest potential, corrosion pits ( ~ 3 Å deep, i.e., one Si double layer deep) are nucleated on wider terraces, increasing the etch rate. Individual atoms could also be resolved on terraces, showing that the surface of Si(111) is unreconstructed when in contact with an aqueous solution. The results presented here confirm previous electrochemical data concerning the bias dependence of the etch rate and yield new insight into the etch mechanism of Si in such solutions.
Free Keywords:Scanning-Tunneling Microscopy; Aqueous KOH; Underpotential deposition; Crystalline silicon; Alkaline-solutions; Si(111) Surfaces; Si; Platinum(111); Electrodes; Resolution
External Publication Status:published
Document Type:Article
Communicated by:Martin Wolf
Affiliations:Fritz-Haber-Institut/Physical Chemistry
External Affiliations:Allongue P, Lab Phys Liquides & Electrochim, CNRS, LP 15, F-75005 Paris, France
Identifiers:URL:http://www.sciencedirect.com/science?_ob=ArticleUR...
DOI:10.1016/0039-6028(92)90814-M
The scope and number of records on eDoc is subject to the collection policies defined by each institute - see "info" button in the collection browse view.