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          Institute: MPI für Intelligente Systeme (ehemals Max-Planck-Institut für Metallforschung)     Collection: Stuttgart Center for Electron Microscopy: StEM     Display Documents



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ID: 438378.0, MPI für Intelligente Systeme (ehemals Max-Planck-Institut für Metallforschung) / Stuttgart Center for Electron Microscopy: StEM
The importance of grain boundaries for the time-dependent mobility degradation in organic thin-film transistors
Authors:Weitz, R. T.; Amsharov, K.; Zschieschang, U.; Burghard, M.; Jansen, M.; Kelsch, M.; Rhamati, B.; van Aken, P. A.; Kern, K.; Klauk, H.
Language:English
Date of Publication (YYYY-MM-DD):2009-10-27
Title of Journal:Chemistry of Materials
Volume:21
Issue / Number:20
Start Page:4949
End Page:4954
Review Status:Peer-review
Audience:Experts Only
External Publication Status:published
Document Type:Article
Communicated by:Fritz Phillipp
Affiliations:MPI für Metallforschung/Stuttgart Center for Electron Microscopy (StEM)
MPI für Festkörperforschung/Jansen
MPI für Festkörperforschung/Kern
External Affiliations:Institut de Physique de la Matière Condensée, Ecole Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland
Identifiers:DOI:10.1021/cm902145x
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