Home News About Us Contact Contributors Disclaimer Privacy Policy Help FAQ

Home
Search
Quick Search
Advanced
Fulltext
Browse
Collections
Persons
My eDoc
Session History
Login
Name:
Password:
Documentation
Help
Support Wiki
Direct access to
document ID:


          Institute: MPI für Physik     Collection: MPI für Physik     Display Documents



ID: 543128.0, MPI für Physik / MPI für Physik
The Wide Field Imager of the International X-ray Observatory
Authors:Stefanescu, A.; Bautz, M. W.; Burrows, D. N.; Bombelli, L.; Fiorini, C.; Fraser, G.; Heinzinger, K.; Herrmann, S.; Kuster, M.; Lauf, T.; Lechner, P.; Lutz, G.; Majewski, P.; Meuris, A.; Murray, S. S.; Porro, M.; Richter, R.; Santangelo, A.; Schaller, G.; Schnecke, M.; Schopper, F.; Soltau, H.; Strüder, L.; Treis, J.; Tsunemi, H.; de Vita, G.; Wilms, J.
Date of Publication (YYYY-MM-DD):2010
Title of Journal:Nuclear Instruments and Methods in Physics Research Section A
Journal Abbrev.:Nucl.Instrum.Meth.A
Issue / Number:624
Start Page:533
End Page:539
Audience:Not Specified
Intended Educational Use:No
Abstract / Description:The International X-ray Observatory (IXO) will be a joint X-ray observatory mission by ESA, NASA and JAXA. It will have a large effective area (3 m^2 at 1.25 keV) grazing incidence mirror system with good angular resolution (5 arcsec at 0.1-10 keV) and will feature a comprehensive suite of scientific instruments: an X-ray Microcalorimeter Spectrometer, a High Time Resolution Spectrometer, an X-ray Polarimeter, an X-ray Grating Spectrometer, a Hard X-ray Imager and a Wide-Field Imager. The Wide Field Imager (WFI) has a field-of-view of 18 ft×18 ft. It will be sensitive between 0.1 and 15 keV, offer the full angular resolution of the mirrors and good energy resolution. The WFI will be implemented as a 6 in. wafer-scale monolithical array of 1024×1024 pixels of 100×100 mu m^2 size. The DEpleted P-channel Field-Effect Transistors (DEPFET) forming the individual pixels are devices combining the functionalities of both detector and amplifier. Signal electrons are collected in a potential well below the transistor's gate, modulating the transistor current. Even when the device is powered off, the signal charge is collected and kept in the potential well below the gate until it is explicitly cleared. This makes flexible and fast readout modes possible.
Classification / Thesaurus:Semiconductor Detectors
External Publication Status:published
Document Type:Article
Communicated by:N.N.
Affiliations:MPI für Physik
Identifiers:LOCALID:MPP-2010-101
URL:http://dx.doi.org/10.1016/j.nima.2010.05.049
URL:http://publications.mppmu.mpg.de/?action=search&mp...
The scope and number of records on eDoc is subject to the collection policies defined by each institute - see "info" button in the collection browse view.