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          Institute: MPI für Physik     Collection: MPI für Physik     Display Documents

ID: 543899.0, MPI für Physik / MPI für Physik
High energy proton damage effects in thin high resistivity FZ silicon detectors
Authors:Fretwurst, E.; Andricek, L.; Hönniger, F.; Kramberger, G.; Lindström, G.; Lutz, G.; Reiche, M.; Richter, R. H.; Schramm, A.
Date of Publication (YYYY-MM-DD):2005
Title of Journal:Nuclear Instruments and Methods in Physics Research Section A
Journal Abbrev.:Nucl.Instrum.Meth.A
Issue / Number:552/1-2
Start Page:124
End Page:130
Audience:Not Specified
Intended Educational Use:No
Abstract / Description:The proposed luminosity upgrade of the Large Hadron Collider (S-LHC) will demand the inner most layers of the vertex
detector to sustain fluences of about 1016 charged hadrons/cm2. Due to the high multiplicity of tracks, the required spatial
resolution and the extremely harsh radiation field thin silicon detector assemblies are proposed as a possible solution for this
challenge. The radiation tolerance of 50 μm thin high resistivity FZ devices has been studied for 24 GeV/c protons in the
fluence range between 4×1013 cm-2 and 8.6×1015 cm-2. For the manufacturing of such thin devices a technology based on
direct wafer bonding and deep anisotropic etching was used. Annealing measurements at 80°C have shown that the
introduction rate gC in the stable damage component is about the same as observed for oxygen enriched FZ detectors and that
the fluence dependence of the reverse annealing amplitude NY exhibits a saturating function. It is also demonstrated that the
annealing behavior of the reverse current related damage parameter α is independent on the fluence and the silicon material
parameters. Charge collection efficiency (CCE) measurements were performed using 5.8 MeV α-particles. After fully
annealing for about 31 days at 80°C CCE was determined by extrapolation to be 66% at 1016 p/cm2.
Classification / Thesaurus:Semiconductor Detectors
External Publication Status:published
Document Type:Article
Communicated by:N.N.
Affiliations:MPI für Physik
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