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| ID:
543939.0,
MPI für Physik / MPI für Physik |
| DEPFET, a monolithic active pixel sensor for the ILC |
| Authors: | Velthuis, J.; Kohrs, R.; Mathes, M.; Raspereza, A.; Reuen, L.; Andriecek, L.; Koch, M.; Dolezal, Z.; Fischer, P.; Frey, A.; Giesen, F.; Kodys, P.; Kreidl, C.; Krüger, H.; Lodomez, P.; Lutz, G.; Moser, H. - G.; Richter, R. - H.; Sandow, C.; Scheirich, D.; Torne, E.; Trimpl, M.; Wei, Q.; Wermes, N. | | Date of Publication (YYYY-MM-DD): | 2007 | | Title of Journal: | Nuclear Instruments and Methods in Physics Research Section A | | Journal Abbrev.: | Nucl.Instrum.Meth.A | | Issue / Number: | 2 | | Start Page: | 685 | | End Page: | 689 | | Audience: | Not Specified | | Intended Educational Use: | No | | Abstract / Description: | In a DEPleted Field Effect Transistor (DEPFET) sensor a MOSFET is integrated on a sidewards depleted p-on-n silicon detector, thereby combining the advantages of a fully depleted silicon sensor with in-pixel amplification. A 450 μm thick DEPFET was tested in a testbeam. The S/N was found to be larger than 110. The position resolution is better than 5 μm. At a seed cut of 7σ, the efficiency and purity are both close to 100%. In the readout chip a zero-suppression capability is implemented. The functionality was demonstrated using a radio-active source. The predicted impact parameter resolution of a 50 μm thick DEPFET vertex detector, is much better than required for the International Linear Collider (ILC). | | Classification / Thesaurus: | Semiconductor Detectors | | External Publication Status: | published | | Document Type: | Article |
| Communicated by: | N.N. | | Affiliations: | MPI für Physik
| | Identifiers: | LOCALID:MPP-2007-232
URL:http://publications.mppmu.mpg.de/?action=search&mp... |
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