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          Institute: MPI für Physik     Collection: MPI für Physik     Display Documents



ID: 543939.0, MPI für Physik / MPI für Physik
DEPFET, a monolithic active pixel sensor for the ILC
Authors:Velthuis, J.; Kohrs, R.; Mathes, M.; Raspereza, A.; Reuen, L.; Andriecek, L.; Koch, M.; Dolezal, Z.; Fischer, P.; Frey, A.; Giesen, F.; Kodys, P.; Kreidl, C.; Krüger, H.; Lodomez, P.; Lutz, G.; Moser, H. - G.; Richter, R. - H.; Sandow, C.; Scheirich, D.; Torne, E.; Trimpl, M.; Wei, Q.; Wermes, N.
Date of Publication (YYYY-MM-DD):2007
Title of Journal:Nuclear Instruments and Methods in Physics Research Section A
Journal Abbrev.:Nucl.Instrum.Meth.A
Issue / Number:2
Start Page:685
End Page:689
Audience:Not Specified
Intended Educational Use:No
Abstract / Description:In a DEPleted Field Effect Transistor (DEPFET) sensor a MOSFET is integrated on a sidewards depleted p-on-n silicon detector, thereby combining the advantages of a fully depleted silicon sensor with in-pixel amplification. A 450 μm thick DEPFET was tested in a testbeam. The S/N was found to be larger than 110. The position resolution is better than 5 μm. At a seed cut of 7σ, the efficiency and purity are both close to 100%. In the readout chip a zero-suppression capability is implemented. The functionality was demonstrated using a radio-active source. The predicted impact parameter resolution of a 50 μm thick DEPFET vertex detector, is much better than required for the International Linear Collider (ILC).
Classification / Thesaurus:Semiconductor Detectors
External Publication Status:published
Document Type:Article
Communicated by:N.N.
Affiliations:MPI für Physik
Identifiers:LOCALID:MPP-2007-232
URL:http://publications.mppmu.mpg.de/?action=search&mp...
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