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          Institute: MPI für Physik     Collection: MPI für Physik     Display Documents

ID: 543943.0, MPI für Physik / MPI für Physik
Spectroscopic silicon imaging detectors: past achievements and new developments
Authors:Lutz, G.; Andritschke, R.; Andricek, L.; Eckhardt, R.; Englhauser, J.; Fuchs, G.; Hälker, O.; Hartmann, R.; Heinzinger, K.; Herrmann, S.; Holl, P.; Kimmel, N.; Lechner, P.; Meidinger, N.; Porro, M.; Richter, R. - H.; Schaller, G.; Schnecke, M.; Schopper, F.; Soltau, H.; Strüder, L.; Treis, J.; Weichert, U.; Wölfl, S.
Date of Publication (YYYY-MM-DD):2007
Title of Journal:Nuclear Instruments and Methods in Physics Research Section A
Journal Abbrev.:Nucl.Instrum.Meth.A
Issue / Number:2
Start Page:960
End Page:967
Audience:Not Specified
Intended Educational Use:No
Abstract / Description:The need of high quality spectroscopic semiconductor imaging detectors in X-ray astronomy was the principal driving force in founding the MPI Semiconductor Laboratory. Detectors developed in this laboratory are based on new function principles and are processed in the silicon detector processing line established within the laboratory. We describe the development of pnCCDs as already used in the XMM-Newton European X-ray observatory and foreseen for eROSITA, the DEPFET based pixel detector for XEUS and a new development which makes it possible to measure charge with a precision below one elementary charge. A noise value of 0.25 electron r.m.s. has already been reached.
Classification / Thesaurus:Semiconductor Detectors
External Publication Status:published
Document Type:Article
Communicated by:N.N.
Affiliations:MPI für Physik
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