Home News About Us Contact Contributors Disclaimer Privacy Policy Help FAQ

Home
Search
Quick Search
Advanced
Fulltext
Browse
Collections
Persons
My eDoc
Session History
Login
Name:
Password:
Documentation
Help
Support Wiki
Direct access to
document ID:


          Institute: MPI für Physik     Collection: MPI für Physik     Display Documents



ID: 543947.0, MPI für Physik / MPI für Physik
The avalanche drift diode - a black illumination drift silicon photomultiplier
Authors:Ninkovic, J.; Eckhardt, R.; Hartmann, R.; Holl, P.; Koitsch, C.; Lutz, G.; Merck, C.; Mirzoyan, R.; Moser, H. -G.; Otte, N.; Richter, R.; Schaller, G.; Schopper, F.; Soltau, H.; Teshima, M.; Valceanu, G.
Date of Publication (YYYY-MM-DD):2007
Title of Journal:Nuclear Instruments and Methods in Physics Research Section A
Journal Abbrev.:Nucl.Instrum.Meth.A
Issue / Number:2
Start Page:1013
End Page:1015
Audience:Not Specified
Intended Educational Use:No
Abstract / Description:Development of high quantum efficiency photon detectors is needed for many low light level (LLL) applications. Recently a new type of photodetector was introduced, the so-called Silicon PhotoMultiplier (SiPM). Its good characteristics (fast response, high gain and single photon resolution capability) make SiPM suitable for many applications. Yet its quantum efficiency is still not satisfactory
(ca. 40%) for LLL applications. A new detector concept is presented that promises very high ð480%Þ quantum efficiency in a wide
wavelength range (300–1000 nm). Combining the drift diode with an avalanche structure placed on the opposite side of the large-area
radiation entrance window on the fully depleted bulk, one obtains a large-area device that focuses the photoelectron onto a small ‘‘pointlike’’
avalanche region. Engineering of the shallow radiation entrance window provides high quantum efficiency in the desired
wavelength range. Such a device can be used as a building block for a ‘‘silicon photomultiplier’’. Extensive simulations have
demonstrated the validity of this concept. A production of test devices for the optimization and characterization of avalanche regions
and technology parameters has been carried out. The first results from this ‘‘proof of principle’’ production are presented.
Classification / Thesaurus:Semiconductor Detectors
External Publication Status:published
Document Type:Article
Communicated by:N.N.
Affiliations:MPI für Physik
Identifiers:LOCALID:MPP-2007-230
URL:http://publications.mppmu.mpg.de/?action=search&mp...
Full Text:
Sorry, no privileges
The scope and number of records on eDoc is subject to the collection policies defined by each institute - see "info" button in the collection browse view.