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          Institute: MPI für Physik     Collection: MPI für Physik     Display Documents



ID: 544765.0, MPI für Physik / MPI für Physik
Development of DEPFET Macropixel detectors
Authors:Zhang, C.; Lechner, P.; Lutz, G.; Porro, M.; Richter, R. H.; Treis, J.; Strüder, L.; Zhang, S. N.
Date of Publication (YYYY-MM-DD):2006
Title of Journal:Nuclear Instruments and Methods in Physics Research Section A
Journal Abbrev.:Nucl.Instrum.Meth.A
Issue / Number:568
Start Page:207
End Page:216
Audience:Not Specified
Intended Educational Use:No
Abstract / Description:Depleted P-channel Field Effect Transistor (DEPFET) Macropixel detectors have been designed for X-ray applications and the
prototypes with 1_1mm2 pixel size have been fabricated. The prototype applies a newly designed DEPFET structure with drain-cleargate
(DCG) as the readout element of a silicon drift detector. Therefore, the size of Macropixel detectors can be adjusted to match the
requirement of the instrument on spatial resolution from about 50_50 mm2 to several square millimeters. The measured energy
resolution for Mn-Ka peak at room temperature is 191 eV with a prototype single pixel. In this paper we present the DEPFET
Macropixel detector concept as well as the static and dynamic test results.
Classification / Thesaurus:Semiconductor Detectors
External Publication Status:published
Document Type:Conference-Paper
Communicated by:N.N.
Affiliations:MPI für Physik
Identifiers:LOCALID:MPP-2006-210
URL:http://publications.mppmu.mpg.de/?action=search&mp...
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