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          Institute: MPI für Physik     Collection: MPI für Physik     Display Documents



ID: 544827.0, MPI für Physik / MPI für Physik
DEPFET - a pixel device with integrated amplification
Authors:Neeser, W.; Böcker, M.; Buchholz, P.; Fischer, P.; Holl, P.; Kemmer, J.; Klein, P.; Koch, H.; Löcker, M.; Lutz, G.; Matthäy, H.; Strüder, L.; Trimpl, M.; Ulrici, J.; Wermes, N.
Date of Publication (YYYY-MM-DD):2002
Title of Journal:Nuclear Instruments and Methods in Physics Research Section A
Journal Abbrev.:Nucl.Instrum.Meth.A
Issue / Number:477
Start Page:129
End Page:136
Audience:Not Specified
Intended Educational Use:No
Abstract / Description:In the DEPFET pixel concept, the absorbed radiation directly modulates the channel current of a p-JFET transistor being integrated into a fully depleted high ohmic silicon substrate in every pixel cell, offering very low noise operation at room temperature. Hence, DEPFET pixels open new possibilities in biomedical applications, but also have a potential in particle physics and astrophysics. Second prototype 50 mu m x 50 mu m single pixels as well as large (64 x 64) DEPFET matrices have been successfully produced and operated confirming the low noise behavior (12e). Device studies as well as a full DEPFET pixel Bioscope system to be used in real-time digital autoradiography with excellent spatial and energy resolution for X-rays are presented.
Classification / Thesaurus:Experimental Physics
External Publication Status:published
Document Type:Article
Communicated by:N.N.
Affiliations:MPI für Physik
Identifiers:LOCALID:MPP-2002-104
URL:http://publications.mppmu.mpg.de/?action=search&mp...
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