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          Institute: MPI für Chemische Physik fester Stoffe     Collection: publications 2012     Display Documents



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ID: 611284.0, MPI für Chemische Physik fester Stoffe / publications 2012
Electronic structure and optical, mechanical, and transport properties of the pure, electron-doped, and hole-doped Heusler compound CoTiSb
Authors:Ouardi, S.; Fecher, G. H.; Felser, C.; Schwall, M.; Naghavi, S. S.; Gloskovskii, A.; Balke, B.; Hamrle, J.; Postava, K.; Pistora, J.; Ueda, S.; Kobayashi, K.
Language:English
Date of Publication (YYYY-MM-DD):2012-07-16
Title of Journal:Physical Review B
Volume:86
Issue / Number:4
Start Page:045116-1
End Page:045116-13
Sequence Number of Article:045116
Review Status:not specified
Audience:Not Specified
External Publication Status:published
Document Type:Article
Communicated by:Ina Werner
Affiliations:MPI für chemische Physik fester Stoffe
External Affiliations:[Ouardi, S.; Fecher, G.H.; Felser, C.]; Institut für Anorganische und Analytische Chemie, Johannes Gutenberg - Universität, 55099 Mainz, Germany
[Schwall, M.; Naghavi, S.S.; Gloskovskii, A.; Balke, B.]; Institut für Anorganische und Analytische Chemie, Johannes Gutenberg - Universität, 55099 Mainz, Germany
[Hamrle, J.; Postava, K.; Pistora, J.]; Department of Physics and Nanotechnology Center, VSB - Technical University of Ostrava, 70833 Ostrava-Poruba, Czech Republic
[Ueda, S.]; Synchrotron X-ray station at SPring-8, National Institute for Materials Science, Hyogo 679-5148, Japan
[Kobayashi, K.]; NIMS Beamline Station at SPring-8, National Institute for Materials Science, Hyogo 679-5148, Japan
Identifiers:DOI:10.1103/PhysRevB.86.045116
ISSN:1098-0121
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