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          Institute: MPI für Plasmaphysik     Collection: Articles, Books, Inbooks     Display Documents



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ID: 614876.0, MPI für Plasmaphysik / Articles, Books, Inbooks
Modeling of altered layer formation during reactive ion etching of GaAs
Authors:Mutzke, A.; Rai, A.; Schneider, R.; Angelin, E.; Hippler, R.
Language:English
Date of Publication (YYYY-MM-DD):2012
Title of Journal:Applied Surface Science
Volume:263
Start Page:626
End Page:632
Copyright:Elsevier B.V.
Review Status:Peer-review
Audience:Experts Only
External Publication Status:published
Document Type:Article
Communicated by:N. N.
Affiliations:MPI für Plasmaphysik/Stellarator Theory
External Affiliations:Institute of Physics, Ernst-Moritz-Arndt-University Greifswald, Felix-Hausdorff-Str. 6, D-17489 Greifswald, GErmany
Identifiers:DOI:10.1016/j.apsusc.2012.09.123
URL:http://dx.doi.org/10.1016/j.apsusc.2012.09.123
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