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          Institute: MPI für Chemische Physik fester Stoffe     Collection: publications 2013     Display Documents



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ID: 670772.0, MPI für Chemische Physik fester Stoffe / publications 2013
Strong dependence of the tetragonal Mn2.1Ga thin film crystallization temperature window on seed layer
Authors:Li, M. Y.; Jiang, X.; Samant, M. G.; Felser, C.; Parkin, S. S. P.
Language:English
Date of Publication (YYYY-MM-DD):2013-07-15
Title of Journal:Applied Physics Letters
Volume:103
Issue / Number:3
Start Page:032410-1
End Page:032410-4
Sequence Number of Article:032410
Review Status:not specified
Audience:Not Specified
Abstract / Description:For spintronic applications, such as magnetic memory and logic, magnetic thin films with high perpendicular magnetic anisotropy and spin polarization are needed. An attractive candidate material is the Heusler compound Mn3-xGa (x varying from 0 to 2). We show that there is a correlation between the degree of crystallization of thin films of Mn3-xGa (x similar to 0.9) and the magnitude of the perpendicular magnetic anisotropy. Moreover, we find that the crystallization temperature window varies with the seed layer on which the Mn3-xGa films are deposited. Seed layers of Pt, Cr, Ru, Mo and SrTiO3 were considered and the largest crystallization window was found for Pt(100) layers. (C) 2013 AIP Publishing LLC.
External Publication Status:published
Document Type:Article
Communicated by:Ina Werner
Affiliations:MPI für chemische Physik fester Stoffe
Identifiers:ISI:000322146300062 [ID No:1]
ISSN:0003-6951 [ID No:2]
DOI:10.1063/1.4815886
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