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          Institute: MPI für Eisenforschung GmbH     Collection: Computational Materials Design     Display Documents



  history
ID: 670850.0, MPI für Eisenforschung GmbH / Computational Materials Design
Blocking Growth by an Electrically Active Subsurface Layer: The Effect of Si as an Antisurfactant in the Growth of GaN
Authors:Markurt, T.; Lymperakis, L.; Neugebauer, J.; Drechsel, P.; Stauss, P.; Schulz, T.; Remmele, T.; Grillo, V.; Rotunno, E.; Albrecht, M.
Language:English
Date of Publication (YYYY-MM-DD):2013-01-18
Title of Journal:Physical Review Letters
Journal Abbrev.:Phys. Rev. Lett.
Volume:110
Issue / Number:3
Start Page:036103-1
End Page:036103-5
Review Status:not specified
Audience:Not Specified
External Publication Status:published
Document Type:Article
Communicated by:Moderator
Affiliations:MPI für Eisenforschung GmbH
Identifiers:DOI:10.1103/PhysRevLett.110.036103
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