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          Institute: MPI für Chemische Physik fester Stoffe     Collection: publications 2013     Display Documents



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ID: 671359.0, MPI für Chemische Physik fester Stoffe / publications 2013
Direct observation of band bending in the topological insulator Bi2Se3
Authors:ViolBarbosa, C. E.; Shekhar, C.; Yan, B.; Ouardi, S.; Ikenaga, E.; Fecher, G. H.; Felser, C.
Language:English
Date of Publication (YYYY-MM-DD):2013-11-15
Title of Journal:Physical Review B
Volume:88
Issue / Number:19
Start Page:195128-1
End Page:195128-4
Sequence Number of Article:195128
Review Status:not specified
Audience:Not Specified
Abstract / Description:The surface band bending tunes considerably the surface band structures and transport properties in topological insulators. We present a direct measurement of the band bending on the Bi2Se3 by using the bulk sensitive angular-resolved hard x-ray photospectroscopy (HAXPES). We tracked the depth dependence of the energy shift of Bi and Se core states. We estimate that the band bending extends up to about 20 nm into the bulk with an amplitude of 0.23-0.26 eV, consistent with profiles previously deduced from the binding energies of surface states in this material.
External Publication Status:published
Document Type:Article
Communicated by:Ina Werner
Affiliations:MPI für chemische Physik fester Stoffe
Identifiers:ISI:000327158100003 [ID No:1]
ISSN:1098-0121 [ID No:2]
DOI:10.1103/PhysRevB.88.195128
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