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          Institute: MPI für Chemische Physik fester Stoffe     Collection: publications 2013     Display Documents



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ID: 671362.0, MPI für Chemische Physik fester Stoffe / publications 2013
A large-energy-gap oxide topological insulator based on the superconductor BaBiO3
Authors:Yan, B. H.; Jansen, M.; Felser, C.
Language:English
Date of Publication (YYYY-MM-DD):2013-11-08
Title of Journal:Nature Physics
Volume:9
Issue / Number:11
Start Page:709
End Page:711
Review Status:not specified
Audience:Not Specified
Abstract / Description:Topological insulators are a new class of quantum materials that are characterized by robust topological surface states (TSSs) inside the bulk insulating gap(1,2), which hold great potential for applications in quantum information and spintronics as well as thermoelectrics. One major obstacle is the relatively small size of the bulk bandgap, which is typically around 0.3 eV for the known topological insulator materials (ref. 3 and references therein). Here we demonstrate through ab initio calculations that a known superconductor BaBiO3 (BBO) with a T-c of nearly 30 K (refs 4,5) emerges as a topological insulator in the electron-doped region. BBO exhibits a large topological energy gap of 0.7 eV, inside which a Dirac type of TSSs exists. As the first oxide topological insulator, BBO is naturally stable against surface oxidization and degradation, distinct from chalcogenide topological insulators(6-8). An extra advantage of BBO lies in its ability to serve as an interface between TSSs and superconductors to realize Majorana fermions for future applications in quantum computation(9).
External Publication Status:published
Document Type:Article
Communicated by:Ina Werner
Affiliations:MPI für chemische Physik fester Stoffe
Identifiers:ISI:000326685000011 [ID No:1]
ISSN:1745-2473 [ID No:2]
DOI:10.1038/NPHYS2762
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