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          Institute: MPI für Festkörperforschung     Collection: FKF Publikationen 2003     Display Documents



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ID: 7031.0, MPI für Festkörperforschung / FKF Publikationen 2003
Gate-voltage control of spin interactions between electrons and nuclei in a semiconductor
Authors:Smet, J. H.; Deutschmann, R. A.; Ertl, F.; Wegscheider, W.; Abstreiter, G.; von Klitzing, K.
Language:English
Date of Publication (YYYY-MM-DD):2003
Title of Journal:Physica E
Volume:16
Issue / Number:1
Start Page:1
End Page:1
Review Status:Peer-review
Audience:Not Specified
Abstract / Description:Semiconductors are ubiquitous in device electronics, because
their charge distributions can be conveniently manipulated with
applied voltages to perform logic operations, Achieving a
similar level of control over the spin degrees of freedom,
either from electrons or nuclei, could provide intriguing
prospects for information processing and fundamental solid-
state physics issues. Here, we report procedures that cam, out
the controlled transfer of spin angular momentum between
electrons-confined to two dimensions and subjected to a
perpendicular magnetic field-and the nuclei of the host
semiconductor, using gate voltages only. We show that the spin
transfer rate can be enhanced near a ferromagnetic ground state
of the electron system. and that the induced nuclear spin
polarization can be subsequently stored and 'read-out'. These
techniques can also be combined into a spectroscopic tool to
detect the low-energy collective excitations in the electron
system that promote the spin transfer, The existence of such
excitations is contingent on appropriate electron-electron
correlations, and these can be tuned by changing, for example.
the electron density via a gate voltage. (C) 2002 Published by
Elsevier Science B.V.
Free Keywords:spin interactions; quantum hall effects; hyperfine interaction
External Publication Status:published
Document Type:Article
Communicated by:Michaela Asen-Palmer
Affiliations:MPI für Festkörperforschung
External Affiliations:; Max Planck Inst Festkorperforsch, Heisenbergstr 1, D-70569 Stuttgart, Germany
; Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany
; Univ Regensburg, Inst Expt & Angew Phys, D-93040 Regensburg, Germany
Identifiers:ISI:000180775500002
ISSN:1386-9477
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