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          Institute: MPI für Festkörperforschung     Collection: FKF Publikationen 2002     Display Documents



  history
ID: 7051.0, MPI für Festkörperforschung / FKF Publikationen 2002
Structural analysis of the indium-stabilized GaAs(001)-c(8x2) surface
Authors:Lee, T. L.; Kumpf, C.; Kazimirov, A.; Lyman, P. F.; Scherb, G.; Bedzyk, M. J.; Nielsen, M.; Feidenhans'l, R.; Johnson, R. L.; Fimland, B. O.; Zegenhagen, J.
Language:English
Date of Publication (YYYY-MM-DD):2002
Title of Journal:Physical Review B
Volume:66
Issue / Number:23
Sequence Number of Article:235301
Review Status:Peer-review
Audience:Not Specified
Abstract / Description:The indium-stabilized GaAs(001)-c(8x2) surface was investigated
by surface x-ray diffraction and x-ray standing waves. We find
that the reconstruction closely resembles the c(8x2) structure
described by the recently proposed unified model for clean III-
V semiconductor surfaces [Kumpf , Phys. Rev. Lett. 86, 3586
(2001)]. Consistent with this unified model, no In dimers are
found for the present surface. Instead, for coverages less than
0.25 monolayers, the In adatoms adsorb at the initially
unoccupied hollow sites to form In rows along the [110]
direction. Between the In rows, surface and subsurface Ga
dimers are found to coexist in the trench areas. Above 0.25
monolayers, the additional In adatoms fill the trenches and
replace the surface Ga atoms. The final structure of the
surface layer is essentially identical to the InAs clean
surface, except that the In heights are substantially different
due to the lateral strain induced by the lattice mismatch. This
structural difference explains why the ladder-type pattern
observed previously by scanning tunneling microscopy only
appears for the In/GaAs(001) and InAs/GaAs(001) surfaces, but
not for the InAs clean surface. The structural model we propose
for the In-stabilized GaAs(001)-c(8x2) surface, which fully
agrees with the scanning tunneling microscopy results, should
therefore generally apply to strained InAs(001) surfaces.
External Publication Status:published
Document Type:Article
Communicated by:Michaela Asen-Palmer
Affiliations:MPI für Festkörperforschung
External Affiliations:; Northwestern Univ, Dept Mat Sci, Evanston, IL 60208 USA
; Northwestern Univ, Mat Res Ctr, Evanston, IL 60208 USA
; European Synchrotron Radiat Facil, F-38043 Grenoble, France
; Univ Wurzburg, D-97074 Wurzburg, Germany
; Max Planck Inst Festkorperforsch, D-70569 Stuttgart, Germany
; Argonne Natl Lab, Div Mat Sci, Argonne, IL 60439 USA
; Riso Natl Lab, Condensed Matter Phys & Chem Dept, DK-4000 Roskilde, Denmark
; Univ Hamburg, Inst Expt Phys 2, D-22761 Hamburg, Germany
; Norwegian Univ Sci & Technol, N-7491 Trondheim, Norway
; European Synchrotron Radiat Facil, F-38043 Grenoble, France
Identifiers:ISI:000180279400068
ISSN:1098-0121
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