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          Institute: MPI für Festkörperforschung     Collection: FKF Publikationen 2002     Display Documents



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ID: 7153.0, MPI für Festkörperforschung / FKF Publikationen 2002
Non-specular X-ray reflection from self-organized ripple structures in Si/Ge multilayers
Authors:Meduňa, M.; Holý, V.; Stangl, J.; Hesse, A.; Roch, T.; Bauer, G.; Schmidt, O. G.; Eberl, K.
Language:English
Date of Publication (YYYY-MM-DD):2002
Title of Journal:Physica E
Volume:13
Issue / Number:2-4
Start Page:1003
End Page:1007
Review Status:Peer-review
Audience:Not Specified
Abstract / Description:The ripples at the interfaces of five-period Si/Ge multilayer
samples, grown on 0.3degrees miscut (0 0 1) Si are studied
systematically. Five samples with Si spacer layer thicknesses
ranging from 12.6 to 102.7 nm and 6 monolayer Ge were
investigated. From the X-ray reflectivity investigations a
characteristic step bunching morphology is found, with a ripple
period which increases by more than 30% if the Si spacer
thickness is doubled from about 13 to 25 nm, but does not
change further with increasing spacer. These results shed light
on the ongoing discussion about the relative importance of
kinetic versus strain-related origin of the ripple pattern. (C)
2002 Elsevier Science B.V. All rights reserved.
Free Keywords:Si/Ge multilayers; X-ray reflectivity; step bunching
External Publication Status:published
Document Type:Article
Communicated by:Michaela Asen-Palmer
Affiliations:MPI für Festkörperforschung
External Affiliations:; Masaryk Univ, Dept Condensed Matter Phys, Lab Thin Films & Nanostruct, Kotlarska 2, CS-61137 Brno, Czech Republic
; Johannes Kepler Univ, Inst Halbleiterphys, A-4040 Linz, Austria
; Max Planck Inst Festkorperforsch, D-70569 Stuttgart, Germany
Identifiers:ISI:000176869100212
ISSN:1386-9477
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