MPI für Festkörperforschung / FKF Publikationen 2002 |
|Effect of overgrowth on shape, composition, and strain of SiGe islands on Si(001)|
|Authors:||Hesse, A.; Stangl, J.; Holý, V.; Roch, T.; Bauer, G.; Schmidt, O. G.; Denker, U.; Struth, B.|
|Date of Publication (YYYY-MM-DD):||2002|
|Title of Journal:||Physical Review B|
|Issue / Number:||8|
|Sequence Number of Article:||085321|
|Abstract / Description:||We present a method and results based on x-ray scattering
capable of resolving the shape and strain distribution in
buried islands, as well as their vertical composition gradient.
As an example, results are presented obtained for a single
layer of SiGe dome-shaped islands capped by a 160-nm Si layer.
For a growth temperature of 700 degreesC, a significant
decrease of the average Ge content from about x=0.78 before
overgrowth to about x=0.37 is found. The diameter of the
islands increases from 110 to about 180 nm, their height
shrinks from about 13 nm to 6 nm. This significant change of
the island shape and content is accompanied by a pronounced
change of their average in-plane lattice constant. The strain
status of the overgrown flat islands is close to that of an
embedded SiGe quantum well, i.e., with respect to the
relaxation status of the uncapped islands a considerable strain
redistribution takes place.
|External Publication Status:||published|
|Communicated by:||Michaela Asen-Palmer|
|Affiliations:||MPI für Festkörperforschung|
|External Affiliations:||; Johannes Kepler Univ, Inst Halbleiterphys, A-4040 Linz, Austria
; Max Planck Inst Festkorperforsch, D-70569 Stuttgart, Germany
; European Synchrotron Radiat Facil, F-38043 Grenoble, France
; Masaryk Univ, Fac Sci, Dept Solid State Phys, CS-61137 Brno, Czech Republic
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