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          Institute: MPI für Festkörperforschung     Collection: FKF Publikationen 2002     Display Documents



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ID: 7279.0, MPI für Festkörperforschung / FKF Publikationen 2002
Influence of the substrate on the photo-luminescence dynamics in GaInN epilayers
Authors:Korona, K. P.; Prystawko, P.; Leszczynski, M.; Perlin, P.; Suski, T.; Grzegory, I.; Porowski, S.; Kuhl, J.
Language:English
Date of Publication (YYYY-MM-DD):2002
Title of Journal:Materials Science and Engineering B
Volume:93
Issue / Number:1-3
Start Page:73
End Page:76
Review Status:Peer-review
Audience:Not Specified
Abstract / Description:We present results of temperature-dependent, time-resolved
photoluminescence (PL) measurements on a set of Ga1-xInxN (x
congruent to 0.08) layers grown at the same conditions on three
different substrates: bulk (high pressure grown) GaN, SiC and
Al2O3. At 9 K, the maximum of the PL occurs at about 3.1 eV.
The linewidths are 48, 80 and 90 meV for the layers grown on
GaN, Al2O3 and SiC, respectively. The smallest width suggests
the highest homogeneity of the GaInN/GaN. The PL lifetimes
(about 0.8 ns) and intensities are similar in all three
samples. The spectral diffusion of the PL (shift of the PL peak
energy with time) is thermally activated. The highest shift
(DeltaE = 90 meV) and an activation energy E-a = 80 meV are
observed in the GalnN/SiC sample, the lowest (DeltaE < 3 meV)
in the GaInN/GaN sample, The smallest DeltaE (interpreted as a
conduction and valence band fluctuation amplitude) found in the
layer grown on GaN is due to the low dislocation concentration
resulting from the good lattice matching. (C) 2002 Elsevier
Science B.V. All rights reserved.
Free Keywords:GaInN; lifetimes; fluctuations; time-resolved photoluminescence
External Publication Status:published
Document Type:Article
Communicated by:Michaela Asen-Palmer
Affiliations:MPI für Festkörperforschung
External Affiliations:; Univ Warsaw, Inst Expt Phys, Hoza 69, PL-00681 Warsaw, Poland
; Max Planck Inst Festkorperforsch, D-70569 Stuttgart, Germany
; Polish Acad Sci, High Pressure Res Ctr, PL-01142 Warsaw, Poland
Identifiers:ISI:000176089200017
ISSN:0921-5107
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