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          Institute: MPI für Festkörperforschung     Collection: FKF Publikationen 2001     Display Documents



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ID: 7441.0, MPI für Festkörperforschung / FKF Publikationen 2001
Optical anisotropy of (001)-GaAs surface quantum wells
Authors:Lastras-Martínez, L. F.; Rönnow, D.; Santos, P. V.; Cardona, M.; Eberl, K.
Language:English
Date of Publication (YYYY-MM-DD):2001
Title of Journal:Physical Review B
Volume:64
Issue / Number:24
Sequence Number of Article:245303
Review Status:Peer-review
Audience:Not Specified
Abstract / Description:We report a reflectance difference spectroscopy (RDS) study of
the optical anisotropy of GaAs:(001) Surface quantum wells
consisting of a thin GaAs layer (3-30 nm thick) embedded
between an arsenic reconstructed surface and an AlAs barrier.
The RDS spectra display anisotropic contributions from the free
Surface and from the GaAs/AlAs interface. By comparing RDS
spectra for the c(4x4) and (2x4) Surface reconstructions, we
separate these two contributions, and demonstrate that the
anisotropy around the E-1 and E-1 + Delta(1) transitions
comprises a component originating from modifications of bulk
states near the surface. The latter is attributed to
anisotropic strains induced by the surface reconstruction. The
experimental data Lire well described by a model for the RDS
response of the multilayer structures, which also takes into
account the blue energy shifts and the changes in oscillator
strength of the E-1 and E-1 + Delta(1) transitions induced by
quantum-well confinement.
External Publication Status:published
Document Type:Article
Communicated by:Michaela Asen-Palmer
Affiliations:MPI für Festkörperforschung
External Affiliations:; Max Planck Inst Festkorperforsch, Heisenbergstr 1, D-70569 Stuttgart, Germany
; Univ Autonoma San Luis Potosi, Inst Invest Comunicac Opt, San Luis Potosi, Mexico
; Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany
Identifiers:ISI:000173082500055
ISSN:0163-1829
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