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          Institute: MPI für Festkörperforschung     Collection: FKF Publikationen 2002     Display Documents



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ID: 7443.0, MPI für Festkörperforschung / FKF Publikationen 2002
Gate-voltage control of spin interactions between electrons and nuclei in a semiconductor
Authors:Smet, J. H.; Deutschmann, R. A.; Ertl, F.; Wegscheider, W.; Abstreiter, G.; von Klitzing, K.
Language:English
Date of Publication (YYYY-MM-DD):2002
Title of Journal:Nature
Volume:415
Issue / Number:6869
Start Page:281
End Page:286
Review Status:Peer-review
Audience:Not Specified
Abstract / Description:Semiconductors are ubiquitous in device electronics, because
their charge distributions can be conveniently manipulated with
voltages to perform logic operations. Achieving a similar level
of control over the spin degrees of freedom, either from
electrons or nuclei, could provide intriguing prospects for
both information processing and the study of fundamental solid-
state physics issues. Here we report procedures that carry out
the controlled transfer of spin angular momentum between
electrons-confined to two dimensions and subjected to a
perpendicular magnetic field-and the nuclei of the host
semiconductor, using gate voltages only. We show that the spin
transfer rate can be enhanced near a ferromagnetic ground state
of the electron system, and that the induced nuclear spin
polarization can be subsequently stored and 'read out'. These
techniques can also be combined into a spectroscopic tool to
detect the low-energy collective excitations in the electron
system that promote the spin transfer. The existence of such
excitations is contingent on appropriate electron-electron
correlations, and these can be tuned by changing, for example,
the electron density via a gate voltage.
External Publication Status:published
Document Type:Article
Communicated by:Michaela Asen-Palmer
Affiliations:MPI für Festkörperforschung
External Affiliations:; Max Planck Inst Festkorperforsch, D-70569 Stuttgart, Germany
; Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany
; Univ Regensburg, Inst Expt & Angew Phys, D-93040 Regensburg, Germany
Identifiers:ISI:000173293500033
ISSN:0028-0836
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