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          Institute: MPI für Festkörperforschung     Collection: FKF Publikationen 2001     Display Documents



  history
ID: 7591.0, MPI für Festkörperforschung / FKF Publikationen 2001
Probing the electronic properties of disordered two-dimensional systems by means of resonant tunnelling
Authors:Dubrovskii, Y. V.; Vdovin, E. E.; Patané, A.; Brounkov, P. N.; Larkin, I. A.; Eaves, L.; Main, P. C.; Maude, D. K.; Portal, J. C.; Ivanov, D. Y.; Khanin, Y. N.; Sirotkin, V. V.; Levin, A.; Henini, M.; Hill, G.
Language:English
Date of Publication (YYYY-MM-DD):2001
Title of Journal:Nanotechnology
Volume:12
Issue / Number:4
Start Page:491
End Page:495
Review Status:Peer-review
Audience:Not Specified
Abstract / Description:We investigate resonant tunnelling in GaAs/(AlGa)As double-
barrier resonant-tunnelling diodes in which a single layer of
InAs self-assembled quantum dots is embedded in the centre of
the GaAs quantum well. The dots provide a well-defined and
controllable source of disorder in the well and we use resonant
tunnelling to study the effect of this disorder on the
electronic properties of the well.
External Publication Status:published
Document Type:Article
Communicated by:Michaela Asen-Palmer
Affiliations:MPI für Festkörperforschung
External Affiliations:; RAS, Inst Microelect, Chernogolovka 142432, Russia
; Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD, England
; AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
; Univ Sheffield, Dept Phys & Astron, Sheffield S3 7RH, S Yorkshire, England
; MPI, CNRS, Grenoble High Magnet Field Lab, F-38042 Grenoble 9, France
; Univ Sheffield, Dept Elect Engn, Sheffield S1 3JD, S Yorkshire, England
; Inst Univ France, F-75005 Paris, France
; Inst Natl Sci Appl, F-31077 Toulouse 4, France
Identifiers:ISI:000173305300023
ISSN:0957-4484
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