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Entries: 1-8  
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Evidence for hydrogen molecules in crystalline silicon.
Editors: Bullis, W. M.; Lin, W.; Wagner, P.; Abe, T.; Kobayashi, S.
Authors: Weber, J.; Leitch, A. W. R.
Title of Book: Defects in Silicon III, Electrochemical Society Proceedings, Vol. 99-1
Start Page: 242
End Page: 252
Place of Publication: Pennington
Publisher: Electrochemical Society
Date of Publication (YYYY-MM-DD): 1999
Document Type: InBook
ID: 181205.0
Formation of hydrogen molescules in crystalline silicon.
Authors: Leitch, A. W. R.; Weber, J.; Alex, V.
Date of Publication (YYYY-MM-DD): 1999
Title of Journal: Materials Science and Engineering B
Volume: 58
Start Page: 6
End Page: 12
Document Type: Article
ID: 180878.0
Hydrogen molecules in GaAs after hydrogen plasma treatment.
Authors: Leitch, A. W. R.; Weber, J.
Date of Publication (YYYY-MM-DD): 1999
Title of Journal: Physica B
Volume: 274
Start Page: 743
End Page: 745
Document Type: Article
ID: 181622.0
Raman spectroscopy of hydrogen molecules in GaAs.
Authors: Leitch, A. W. R.; Weber, J.
Date of Publication (YYYY-MM-DD): 1999
Title of Journal: Physical Review B
Volume: 60
Start Page: 13265
End Page: 13268
Document Type: Article
ID: 180879.0
H2 molecules in c-Si after hydrogen plasma treatment.
Authors: Leitch, A. W. R.; Alex, V.; Weber, J.
Date of Publication (YYYY-MM-DD): 1998
Title of Journal: Solid State Communications
Volume: 105
Start Page: 215
End Page: 19
Document Type: Article
ID: 182183.0
Hydrogen molecules in crystalline silicon.
Authors: Weber, J.; Leitch, A. W. R.; Alex, V.
Date of Publication (YYYY-MM-DD): 1998
Title of Journal: Proceedings of the Electrochemical Society
Volume: 98-1
Start Page: 973
End Page: 983
Document Type: Article
ID: 180481.0
Raman spectroscopy of hydrogen molecules in crystalline silicon.
Authors: Leitch, A. W. R.; Alex, V.; Weber, J.
Date of Publication (YYYY-MM-DD): 1998
Title of Journal: Physical Review Letters
Volume: 81
Start Page: 421
End Page: 424
Document Type: Article
ID: 182177.0
Formation and structure of hydrogen molecules in crystalline Si.
Authors: Leitch, A. W. R.; Alex, V.; Weber, J.
Date of Publication (YYYY-MM-DD): 1997
Title of Journal: Materials Science Forum
Volume: 258-263
Start Page: 241
End Page: 246
Document Type: Article
ID: 182104.0
Entries: 1-8  
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