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Entries: 1-10  
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Limits of Indium Incorporation on In1-xGaxN {0001} III- and N-Polar Surfaces: An Ab Initio Approach
Authors: Duff, A.; Lymperakis, L.; Neugebauer, J.
(Start) Date of Event
(YYYY-MM-DD):
 2013-08-25
Name of Conference/Meeting: 10th International Conference on Nitride Semiconductors
Document Type: Poster
ID: 671096.0
Alloy fluctuations in III-Nitrides revisited by aberration corrected transmission electron microscopy
Authors: Schulz, T.; Remmele, T.; Markurt, T.; Korytov, M.; Albrecht, M.; Duff, A.; Lymperakis, L.; Neugebauer, J.
(Start) Date of Conference/Meeting
(YYYY-MM-DD):
 2012-10-14
Name of Conference/Meeting: International Workshop on Nitride Semiconductors 2012
Place of Conference/Meeting: Sapporo, Japan
Document Type: Talk at Event
ID: 626125.0
Composition analysis of InGaN quantum wells by STEM-HAADF
Authors: Markurt, T.; Rotunno, E.; Grillo, V.; Duff, A.; Lymperakis, L.; Schulz, T.; Remmele, T.; Albrecht, M.
(Start) Date of Event
(YYYY-MM-DD):
 2012-09-16
Name of Conference/Meeting: 15th European Microscopy Congress
Document Type: Poster
ID: 626126.0
Quantitative measurement of composition fluctuations in InGaN quantum wells
Authors: Remmele, T.; Schulz, T.; Markurt, T.; Korytov, M.; Albrecht, M.; Duff, A.; Lymperakis, L.; Neugebauer, J.
(Start) Date of Event
(YYYY-MM-DD):
 2012-09-16
Name of Conference/Meeting: 15th European Microscopy Congress
Document Type: Poster
ID: 626127.0
Dislocation Mechanisms and Strain Relaxation in the Growth of GaN on Silicon Substrates for Solid State Lighting
Authors: Albrecht, M.; Markurt, T.; Schulz, T.; Lymperakis, L.; Duff, A.; Neugebauer, J.; Drechsel, P.; Stauss, P.
(Start) Date of Conference/Meeting
(YYYY-MM-DD):
 2012-06-24
Name of Conference/Meeting: International Conference on Extended Defects in Semiconductors
Place of Conference/Meeting: Thessaloniki, Greek
Document Type: Talk at Event
ID: 626122.0
Ab-initio modelling of InGaN: Research and impact on research career
Authors: Duff, A.
(Start) Date of Conference/Meeting
(YYYY-MM-DD):
 2011-10-10
Name of Conference/Meeting: SINOPLE mid-term meeting
Place of Conference/Meeting: Harnack-Haus, Berlin, Germany
Document Type: Talk at Event
ID: 581694.0
Ab-initio based comparitive study of In incorporation and surface segregation on III- and N-face {0001} InGaN surfaces
Authors: Duff, A.; Lymperakis, L.; Neugebauer, J.
(Start) Date of Event
(YYYY-MM-DD):
 2011-10-10
Name of Conference/Meeting: SINOPLE mid-term meeting
Document Type: Poster
ID: 581695.0
Ab-initio Study of Indium Adsorption in c-plane InGaN
Authors: Duff, A.; Lymperakis, L.; Neugebauer, J.
(Start) Date of Conference/Meeting
(YYYY-MM-DD):
 2011-10-06
Name of Conference/Meeting: SINOPLE meeting
Place of Conference/Meeting: Düsseldorf, Germany
Document Type: Talk at Event
ID: 581692.0
Ab-initio based comparitive study of In incorporation and surface segregation on III- and N-face {0001} InGaN surfaces
Authors: Duff, A.; Lymperakis, L.; Neugebauer, J.
(Start) Date of Conference/Meeting
(YYYY-MM-DD):
 2011-07-10
Name of Conference/Meeting: 9th International Conference of Nitride Semi-Conductors
Place of Conference/Meeting: Glasgow, UK
Document Type: Talk at Event
ID: 581696.0
Ab-initio based growth simulations of Ga- and N- polar InGaN surfaces: A comparitive study
Authors: Duff, A.; Lymperakis, L.; Neugebauer, J.
(Start) Date of Conference/Meeting
(YYYY-MM-DD):
 2011-07-06
Name of Conference/Meeting: CM-Workshop
Place of Conference/Meeting: Akademie Biggesee, Attendorn, Germany
Document Type: Talk at Event
ID: 581693.0
Entries: 1-10  
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