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Entries: 1-9  
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Band parameters and strain effects in ZnO and group-III nitrides
Authors: Yan, Qimin; Rinke, Patrick; Winkelnkemper, Momme; Qteish, A.; Bimberg, D.; Scheffler, Matthias; Van de Walle, Chris G.
Date of Publication (YYYY-MM-DD): 2011
Title of Journal: Semiconductor Science and Technology
Volume: 26
Issue / Number: 01
Sequence Number of Article: 014037
Document Type: Article
ID: 477152.0
Consistent set of band parameters for the group-III nitrides AlN, GaN, and InN
Authors: Rinke, P.; Winkelnkemper, M.; Qteish, A.; Bimberg, D.; Neugebauer, J.; Scheffler, M.
Date of Publication (YYYY-MM-DD): 2008-02-19
Title of Journal: Physical Review B
Volume: 77
Sequence Number of Article: 075202
Document Type: Article
ID: 395330.0
Exciting prospects for solids: Exact-exchange based functionals meet quasiparticle energy
Authors: Rinke, P.; Qteish, A.; Bimberg, D.; Neugebauer, J.; Scheffler, M.
Date of Publication (YYYY-MM-DD): 2008-02-01
Title of Journal: Physica Status Solidi (B)
Volume: 245
Issue / Number: 5
Start Page: 929
End Page: 945
Document Type: Article
ID: 395331.0
Band gap and band parameters of InN from quasiparticle energy calculations based on exact-exchange density-functional theory
Authors: Rinke, P.; Scheffler, M.; Qteish, A.; Neugebauer, J.
(Start) Date of Conference/Meeting
(YYYY-MM-DD):
 2007-03-26
Name of Conference/Meeting: Spring meeting of the German Physical Society (DPG)
Place of Conference/Meeting: Regensburg, Germany
Document Type: Talk at Event
ID: 319968.0
Band gap and band parameters of InN and GaN from quasiparticle energy calculations based on exact-exchange density-functional theory.
Authors: Rinke, P.; Qteish, A.; Winkelnkemper, M.; Bimberg, D.; Neugebauer, J.; Scheffler, M.
Date of Publication (YYYY-MM-DD): 2006
Title of Journal: Applied Physics Letters
Volume: 89
Issue / Number: 16
Sequence Number of Article: 161919
Document Type: Article
ID: 291372.0
Role of semicore states in the electronic structure of group-III nitrides: An exact-exchange study
Authors: Qteish, A.; Al-Sharif, A. I.; Fuchs, M.; Scheffler, M.; Boeck, S.; Neugebauer, J.
Date of Publication (YYYY-MM-DD): 2005
Title of Journal: Physical Review B
Volume: 72
Sequence Number of Article: 155317
Document Type: Article
ID: 289765.0
Exact-exchange calculations of the electronic structure of AlN, GaN and InN
Authors: Qteish, A.; Al-Sharif, A. I.; Fuchs, M.; Scheffler, M.; Boeck, S.; Neugebauer, J.
Date of Publication (YYYY-MM-DD): 2005
Title of Journal: Computer Physics Communications
Volume: 169
Start Page: 28
Document Type: Article
ID: 289766.0
Combining GW calculations with exact-exchange density-functional theory: An analysis of valence-band photoemission for compound seminconductors
Authors: Rinke, P.; Qteish, A.; Neugebauer, J.; Freysoldt, C.; Scheffler, M.
Date of Publication (YYYY-MM-DD): 2005
Title of Journal: New Journal of Physics
Volume: 7
Start Page: 126
End Page: 160
Document Type: Article
ID: 290770.0
Stability and structural properties of the SC16 phase of ZnS under high pressure
Authors: Qteish, A.; Parrinello, M.
Date of Publication (YYYY-MM-DD): 2000
Title of Journal: Physical Review B
Volume: 61
Start Page: 6521
End Page: 6524
Document Type: Article
ID: 181797.0
Entries: 1-9  
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