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Measurement of the indium concentration in high indium content InGaN layers by scanning transmission electron microscopy and atom probe tomography |
Authors: Mehrtens, T.; Schowalter, M.; Tytko, D.; Choi, P.; Raabe, D.; Hoffmann, L.; Jönen, H.; Rossow, U.; Hangleiter, A.; Rosenauer, A. | Date of Publication (YYYY-MM-DD): 2013 | Title of Journal: Applied Physics Letters | Volume: 102 | Issue / Number: 13 | Start Page: 4 pages | Sequence Number of Article: 132112 | Document Type: Article | ID: 668578.0 |
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A (S)TEM and atom probe tomography study of InGaN |
Authors: Mehrtens, T.; Bley, S.; Schowalter, M.; Sebald, K.; Seyfried, M.; Gutowski, J.; Gerstl, S. A.; Choi, P.; Raabe, D.; Rosenauer, A. | Date of Publication (YYYY-MM-DD): 2011 | Name of Conference/Meeting: 17th International Conference on Microscopy of Semiconducting Materials 2011 | Title of Journal: Journal of Physics, Conference Series | Volume (in Journal): 326 | Issue / Number: 012029 | Start Page: 1 | End Page: 4 | Document Type: Conference-Paper | ID: 576294.0 |
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Structural and chemical analysis of CdSe islands in a ZnSe matrix by transmission electron microscopy |
Authors: Gerthsen, D.; Rosenauer, A.; Litvinov, D.; Peranio, N. | Date of Publication (YYYY-MM-DD): 2000 | Title of Journal: Journal of Crystal Growth | Volume: 214/215 | Sequence Number of Article: 707 | Document Type: Article | ID: 321498.0 |
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Investigation of CdSe/ZnSe quantum dot structures by composition evaluation by lattice fringe analysis |
Authors: Rosenauer, A.; Peranio, N.; Gerthsen, D. | Date of Publication (YYYY-MM-DD): 1999 | Title of Journal: Microscopy of Semiconducting Materials 1999 | Start Page: 117 | End Page: 120 | Document Type: Article | ID: 321579.0 |
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