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Entries: 1-5  
Measurement of the indium concentration in high indium content InGaN layers by scanning transmission electron microscopy and atom probe tomography
Authors: Mehrtens, T.; Schowalter, M.; Tytko, D.; Choi, P.; Raabe, D.; Hoffmann, L.; Jönen, H.; Rossow, U.; Hangleiter, A.; Rosenauer, A.
Date of Publication (YYYY-MM-DD): 2013
Title of Journal: Applied Physics Letters
Volume: 102
Issue / Number: 13
Start Page: 4 pages
Sequence Number of Article: 132112
Document Type: Article
ID: 668578.0
A (S)TEM and atom probe tomography study of InGaN
Authors: Mehrtens, T.; Bley, S.; Schowalter, M.; Sebald, K.; Seyfried, M.; Gutowski, J.; Gerstl, S. A.; Choi, P.; Raabe, D.; Rosenauer, A.
Date of Publication (YYYY-MM-DD): 2011
Name of Conference/Meeting: 17th International Conference on Microscopy of Semiconducting Materials 2011
Title of Journal: Journal of Physics, Conference Series
Volume (in Journal): 326
Issue / Number: 012029
Start Page: 1
End Page: 4
Document Type: Conference-Paper
ID: 576294.0
Structural and chemical analysis of CdSe/ZnSe nanostructures by transmission electron microscopy
Authors: Peranio, N.; Rosenauer, A.; Gerthsen, D.; Sorokin, S.V.; Sedova, I.V.; Ivanov, S.V.
Date of Publication (YYYY-MM-DD): 2000
Title of Journal: Physical Review B
Volume: 61
Sequence Number of Article: 16015
Document Type: Article
ID: 321495.0
Structural and chemical analysis of CdSe islands in a ZnSe matrix by transmission electron microscopy
Authors: Gerthsen, D.; Rosenauer, A.; Litvinov, D.; Peranio, N.
Date of Publication (YYYY-MM-DD): 2000
Title of Journal: Journal of Crystal Growth
Volume: 214/215
Sequence Number of Article: 707
Document Type: Article
ID: 321498.0
Investigation of CdSe/ZnSe quantum dot structures by composition evaluation by lattice fringe analysis
Authors: Rosenauer, A.; Peranio, N.; Gerthsen, D.
Date of Publication (YYYY-MM-DD): 1999
Title of Journal: Microscopy of Semiconducting Materials 1999
Start Page: 117
End Page: 120
Document Type: Article
ID: 321579.0
Entries: 1-5  
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