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| Measurement of the indium concentration in high indium content InGaN layers by scanning transmission electron microscopy and atom probe tomography |
| Authors: Mehrtens, T.; Schowalter, M.; Tytko, D.; Choi, P.; Raabe, D.; Hoffmann, L.; Jönen, H.; Rossow, U.; Hangleiter, A.; Rosenauer, A. | | Date of Publication (YYYY-MM-DD): 2013 | | Title of Journal: Applied Physics Letters | | Volume: 102 | | Issue / Number: 13 | | Start Page: 4 pages | | Sequence Number of Article: 132112 | | Document Type: Article | | ID: 668578.0 |
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| A (S)TEM and atom probe tomography study of InGaN |
| Authors: Mehrtens, T.; Bley, S.; Schowalter, M.; Sebald, K.; Seyfried, M.; Gutowski, J.; Gerstl, S. A.; Choi, P.; Raabe, D.; Rosenauer, A. | | Date of Publication (YYYY-MM-DD): 2011 | | Name of Conference/Meeting: 17th International Conference on Microscopy of Semiconducting Materials 2011 | | Title of Journal: Journal of Physics, Conference Series | | Volume (in Journal): 326 | | Issue / Number: 012029 | | Start Page: 1 | | End Page: 4 | | Document Type: Conference-Paper | | ID: 576294.0 |
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| Structural and chemical analysis of CdSe islands in a ZnSe matrix by transmission electron microscopy |
| Authors: Gerthsen, D.; Rosenauer, A.; Litvinov, D.; Peranio, N. | | Date of Publication (YYYY-MM-DD): 2000 | | Title of Journal: Journal of Crystal Growth | | Volume: 214/215 | | Sequence Number of Article: 707 | | Document Type: Article | | ID: 321498.0 |
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| Investigation of CdSe/ZnSe quantum dot structures by composition evaluation by lattice fringe analysis |
| Authors: Rosenauer, A.; Peranio, N.; Gerthsen, D. | | Date of Publication (YYYY-MM-DD): 1999 | | Title of Journal: Microscopy of Semiconducting Materials 1999 | | Start Page: 117 | | End Page: 120 | | Document Type: Article | | ID: 321579.0 |
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