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Ultrahigh gain and non-radiative recombination channels in 1.5 µm range metamorphic InAs-InGaAs quantum dot lasers on GaAs substrates
Authors: Novikov, I.; Gordeev, N.Y.; Maximov, M.; Shernyakov, Y.M.; Zhukov, A.E.; Vasil'ev, A.P.; Semenova, E.S.; Ustinov, V.M.; Ledentsov, N.N.; Bimberg, D.; Werner, P.; Zakharov, N.D.
Date of Publication (YYYY-MM-DD): 2005
Title of Journal: Semiconductor Science and Technology
Volume: 20
Issue / Number: 1
Start Page: 33
End Page: 37
Document Type: Article
ID: 275279.0
Optical and structural properties of InAs quantum dot arrays grown in an InxGa1-xAs matrix on a GaAs substrate
Authors: Kryzhanovskaya, N.; Gladyschev, A.G.; Blokhin, S.A.; Musikhin, Y.G.; Zhukov, A.E.; Maksimov, M.; Zakharov, N.D.; Tsatsulnikov, A.F.; Ledentsov, N.N.; Werner, P.; Guffart, F.; Bimberg, D.
Date of Publication (YYYY-MM-DD): 2004
Title of Journal: Semiconductors.
Volume: 38
Issue / Number: 7
Start Page: 833
End Page: 836
Document Type: Article
ID: 223922.0
Entries: 1-2  
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