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The Influence of Structural Relaxation on the Valence-Band Offset at Semiconductor-Semiconductor Interfaces
Editors: Anastassakis, E. M.; Joannopoulos, J. D.
Authors: Methfessel, M.; Agrawal, B. K.; Scheffler, M.
Date of Publication (YYYY-MM-DD): 1990
Title of Journal: Proc. 20th Int. Conf. on the Physics of Semiconductors (ICPS-20)
Start Page: 989
End Page: 992
Document Type: Article
ID: 2088.2
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